Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example barium tungstate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example barium tungstate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

A multilayer ceramic capacitor that includes a ceramic body including a stack of a plurality of dielectric layers and a plurality of first and second internal electrodes; and first and second external electrodes provided at each of both end faces of the ceramic body. Each of the plurality of dielectric layers contain Ba, Ti, P and Si. The plurality of dielectric layers include an outer dielectric layer located on an outermost side in the stacking direction; an inner dielectric layer located between the first and second internal electrodes; and a side margin portion in a region where the first and second internal electrodes do not exist. In at least one of the outer dielectric layer, the inner dielectric layer and the side margin portion, the P and the Si segregate in at least one of grain-boundary triple points of three ceramic particles.

A W.sub.18O.sub.49 peak is confirmed by X-ray diffraction analysis of a sputtering surface and a cross section orthogonal to the sputtering surface, a ratio I.sub.S(103)/I.sub.S(010) of a diffraction intensity I.sub.S(103) of a (103) plane to a diffraction intensity I.sub.S(010) of a (010) plane of W.sub.18O.sub.49 of the sputtering surface is 0.57 or more, a ratio I.sub.C(103)/I.sub.C(010) of a diffraction intensity I.sub.C(103) of the (103) plane to a diffraction intensity I.sub.C(010) of the (010) plane of W.sub.18O.sub.49 of the cross section is 0.38 or less, and an area ratio of the W.sub.18O.sub.49 phase of a surface parallel to the sputtering surface is 37% or more.

A sintered composite ceramic, including: a lithium-garnet major phase; and a lithium-rich minor phase, such that the lithium-rich minor phase comprises Li.sub.xZrO.sub.(x+4)/2, with 2≤x≤10.

A film is formed by use of a composition containing (A) a binder resin, (B) a hard particle, and (C) a solid lubricant selected from the group containing molybdenum disulfide and graphite, wherein the composition contains tungsten carbide as the hard particle, and wherein weight ratio of (B) the hard particles and (C) the solid lubricant, (B)/(C), is in the range of 1 to 3.

Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 μm or less or a maximum height Ry of 10 μm or less.

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

Provided is a Mn—Nb—W—Cu—O-based sputtering target including, in the component composition, Mn, Nb, W, Cu, and O. The sputtering target has a relative density of at least 90%, and includes a crystal phase of MnNb.sub.2O.sub.3.67. Also provided is a production method for the sputtering target.

An LTCC microwave dielectric material, including the following components: a Ba.sub.5Si.sub.8O.sub.21+(1−a) (Mg.sub.xCa.sub.ySr.sub.zBa.sub.1-x-y-z)WO.sub.4+Ba—B—Si glass; wherein 0.4≤a≤0.8, 0≤x≤1, 0≤y≤1, 0≤z≤1. By adjusting the amounts of Ba.sub.5Si.sub.8O.sub.21 and (Mg.sub.xCa.sub.ySr.sub.zBa.sub.1-x-y-z)WO.sub.4, the temperature coefficient of resonance frequency can be adjusted to nearly zero. The material is suitable for the fields of high-frequency communication and radiofrequency. Also disclosed is a method for preparing the LTCC microwave dielectric material.