Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20 when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550 C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 1.010.sup.18 cm.sup.3 or lower, and a carrier mobility of 10 cm.sup.2 V.sup.1 sec.sup.1 or higher.

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550 C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.010.sup.18 cm.sup.3 or lower, and a carrier mobility of 10 cm.sup.2V.sup.1 sec.sup.1 or higher.

An oxide superconductor of an embodiment includes an oxide superconducting layer including at least one superconducting region containing barium (Ba), copper (Cu), and a first rare earth element, having a continuous perovskite structure, and having a size of 100 nm100 nm100 nm or more, and a non-superconducting region in contact with the at least one superconducting region, containing praseodymium (Pr), barium (Ba), copper (Cu), and a second rare earth element, having a ratio of a number of atoms of the praseodymium (Pr) to a sum of a number of atoms of the second rare earth element and the number of atoms of the praseodymium (Pr) being 20% or more, having a continuous perovskite structure continuous with the continuous perovskite structure of the superconducting region, and having a size of 100 nm100 nm100 nm or more.

The present invention relates to a ferrite sintered plate having a composition comprising 47 to 50 mol % of Fe.sub.2O.sub.3, 7 to 26 mol % of NiO, 13 to 36 mol % of ZnO, 7 to 12 mol % of CuO and 0 to 1.5 mol % of CoO, as calculated in terms of the respective oxides, in which the ferrite sintered plate has a volume resistivity of 110.sup.8 to 110.sup.12.Math.cm and a thickness of 10 to 60 m; and a ferrite sintered sheet comprising the ferrite sintered plate on a surface of which a groove or grooves are formed, and an adhesive layer and/or a protective layer formed on the ferrite sintered plate, in which the ferrite sintered sheet has a magnetic permeability at 500 kHz a real part of which is 120 to 800 and an imaginary part of which is 0 to 30, and a product (m) of the real part of the magnetic permeability at 500 kHz of the ferrite sintered sheet and a thickness of the ferrite sintered plate is 5000 to 48000. The ferrite sintered plate and the ferrite sintered sheet according to the present invention have a high volume resistivity as well as a large value and a small value of a magnetic permeability thereof, and therefore can be suitably used as a shielding plate in a digitizer system.

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20 when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550 C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 1.010.sup.18 cm.sup.3 or lower, and a carrier mobility of 10 cm V.sup.1sec.sup.1 or higher.

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550 C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.010.sup.18 cm.sup.3 or lower, and a carrier mobility of 10 cm.sup.2 V.sup.1 sec.sup.1 or higher.

A superconducting wire according to an embodiment includes: a substrate; a first region provided on the substrate and containing a first rare earth element, Ba, Cu, and O; a second region provided on the substrate and containing a second rare earth element, Ba, Cu, and O; and a third region provided on the substrate, provided between the first region and the second region, and containing a third rare earth element, Pr, Ba, Cu, and O. A surface density of particles having an aspect ratio of 3 or more present on a surface of the third region is larger than a surface density of particles having an aspect ratio of 3 or more present on surfaces of the first region and the second region.

A superconducting composition of matter including overlapping first and second regions. The regions comprise unit cells of a solid, the first region comprises an electrical insulator or semiconductor, and the second region comprises a metallic electrical conductor. The second region extends through the solid and a subset of said second region comprise surface metal unit cells that are adjacent to at least one unit cell from the first region. The ratio of the number of said surface metal unit cells to the total number of unit cells in the second region being at least 20 percent.

In one aspect, the present invention provides a solid-state electrolyte material. The solid-state electrolyte material comprises a composition of Formula (XX), (XX-A), (XX-B), (XX-C), (I), (Ia), and/or (Ib), as described herein. Another aspect provides a method of making a green body. A further aspect provides a method of making a sintered solid-state electrolyte material.

A superconducting composition of matter including overlapping first and second regions. The regions comprise unit cells of a solid, the first region comprises an electrical insulator or semiconductor, and the second region comprises a metallic electrical conductor. The second region extends through the solid and a subset of said second region comprise surface metal unit cells that are adjacent to at least one unit cell from the first region. The ratio of the number of said surface metal unit cells to the total number of unit cells in the second region being at least 20 percent.