A cubic boron nitride sintered material includes: 20 to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the number of atoms of the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, this ratio is more than or equal to 10% and less than or equal to 80%, and in an X-ray diffraction spectrum of the cubic boron nitride sintered material, one or both of conditions 1 and 2 are satisfied.

A cBN sintered compact comprising a cubic boron nitride and a ceramic binder phase, wherein a cubic C-containing Ta compound in an amount of 1.0 to 15.0 vol % is dispersed in the ceramic binder phase and has a mean particle diameter of 50 to 500 nm.

A cBN-based ultra-high pressure sintered body contains cBN particles and a binder phase. The binder phase contains at least one of a nitride or oxide of Al or a nitride, carbide, or carbonitride of Ti, and a metal boride having an average particle diameter of 20 to 300 nm is dispersed in an amount of 0.1 to 5.0 vol % in the binder phase. The metal boride includes a metal boride (B) containing at least one of Nb, Ta, Cr, Mo, and W as a metal component and containing no Ti and a metal boride (A) containing only Ti as a metal component. In a case where a ratio (vol %) of the metal boride (A) in the metal boride is represented by V.sub.a and a ratio (vol %) of the metal boride (B) is represented by V.sub.b, a ratio of V.sub.b/V.sub.a is 0.1 to 1.0.

An insert of the present disclosure includes a cBN sintered compact containing cBN and TiN. The cBN occupies 60% or more of the cross-sectional area of the cBN sintered compact observed. TiN(200) is higher than cBN(111), where the TiN (200) is an X-ray intensity on a (200) plane of the TiN and the cBN (111) is an X-ray intensity on a (111) plane of the cBN, obtained by X-ray diffraction on the cBN sintered compact.

An object of the present invention is to provide a high-density Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C) and is furthermore to provide at least one of the high-density Cr—Si—C-based sintered body, a sputtering target including the sintered body or a method for producing a film using the sputtering target. The present invention can provide a Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C), wherein the sintered body has a relative density of 90% or more and a porosity of 13% or less.

The present disclosure provides for ceramic composite materials and methods of making ceramic composite materials. In an aspect, the ceramic composite materials can be made of polymer derived ceramics (PDCs) as the matrix, while substrates can be used as the microwave absorbing phases.

A cubic boron nitride sintered material comprises 30% by volume or more and 99.9% by volume or less of cubic boron nitride grains and 0.1% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grain having a carbon content of 0.08% by mass or less, the cubic boron nitride sintered material being free of free carbon.

The present invention relates to a process for the production of fiber-reinforced composite materials with an ultra-refractory, high tenacity, high ablation resistant matrix with self-healing properties, prepared from highly sinterable slurries. The composite material is produced using techniques of infiltration and drying at ambient pressure or under vacuum, and consolidated by sintering with or without the application of gas or mechanical pressure.

A method for the preparation of a dense HfC(Si)—HfB.sub.2 composite ceramic. hafnium oxide powders, nano-sized carbon black and silicon hexaboride powders are mixed in a molar ratio of (1-10):(1-20):(1-5) to obtain a powder mixture. The powder mixture is subjected to ball milling, dried and transferred to a graphite mold for spark plasma sintering. In this way, an in-situ carbon-boron reduction reaction and the sintering densification are completed in one step, and the obtained HfC(Si)—HfB.sub.2 composite ceramic has a density of 94.0%-100% and uniformly dispersed grains.

A cubic boron nitride sintered material includes: more than 80 volume % and less than 100 volume % of cubic boron nitride grains; and more than 0 volume % and less than 20 volume % of a binder phase. The binder phase includes: at least one selected from a group consisting of a simple substance, an alloy, and an intermetallic compound selected from a group consisting of a group 4 element, a group 5 element, a group 6 element in a periodic table, aluminum, silicon, cobalt, and nickel. A dislocation density of the cubic boron nitride grains is more than or equal to 3×10.sup.17/m.sup.2 and less than or equal to 1×10.sup.20/m.sup.2.