A method for forming an ultra-high temperature (UHT) composite structure includes dispensing a polymeric precursor with a spinneret biased at a first DC voltage; forming a plurality of nanofibers from the polymeric precursor; receiving the plurality of nanofibers with a collector biased at a second DC voltage different than the first DC voltage; and changing a direction of movement of the plurality of nanofibers between the spinneret and the collector with a plurality of magnets having a magnetic field by adjusting the magnetic field.

A decorative item is made of a ceramic material, where ceramic material includes a carbide phase and an oxide phase, the carbide phase being present in a percentage by volume comprised between 50 and 95% and the oxide phase being present in a percentage by volume comprised between 5 and 50%. The decorative item is manufactured by a method of powder metallurgy.

A cubic boron nitride sintered body has between 50% and 75% cubic boron nitride by volume and between 25% and 50% binder phase by volume, and inevitable impurities. The binder phase contains an Al compound and a Zr compound. The Al compound contains Al and one or more of N, O and B; and the Zr compound contains Zr and one or more of C, N, O and B. At a polished surface of the cubic boron nitride sintered body, 40% or more of the Zr compounds satisfy the ratio 0.25≦n/N≦0.8, where: N represents the number of line segments drawn radially at equal intervals from a center of gravity of a given Zr compound to a boundary with a non-Zr compound; and n represents the number among those N line segments which intersect a boundary between the given Zr compound and cubic boron nitride.

A sintered body of the present invention is a sintered body including a first material and cubic boron nitride. The first material is partially-stabilized ZrO.sub.2 including 5 to 90 volume % of Al.sub.2O.sub.3 dispersed in crystal grain boundaries or crystal grains of partially-stabilized ZrO.sub.2.

A hard material which, when used as a material of a sintered material, makes it possible to obtain a sintered material with excellent abrasion resistance, a sintered material, a cutting tool including the sintered material, a method for manufacturing the hard material and a method for manufacturing the sintered material are provided. The hard material contains aluminum, nitrogen, and at least one element selected from the group consisting of titanium, chromium, and silicon, and has a cubic rock salt structure.

A composite composed of one or a plurality of principal strengthening compounds and at least one principal cemented refractory metal that is prepared by combining a suitable binary to senary borides and/or carbides with a unitary to binary principal refractory metal is disclosed. As compared with the conventional sintered cemented carbides, the composite of the disclosure not only possess high hardness and high toughness but also has various ratios of principal components since it is not prepared with equal mole during the process.

Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.

Particles of a refractory metal or a refractory-metal compound capable of decomposing or reacting into refractory-metal nanoparticles, elemental silicon, and an organic compound having a char yield of at least 60% by weight are combined to form a precursor mixture. The mixture is heating, forming a thermoset and/or metal nanoparticles. Further heating form a composition having nanoparticles of a refractory-metal silicide and a carbonaceous matrix. The composition is not in the form of a powder

To provide a sintered material having excellent oxidation resistance, as well as excellent abrasion resistance and chipping resistance. A sintered material containing a first compound formed of Ti, Al, Si, O, and N is provided.

A method for producing a member for a semiconductor manufacturing apparatus includes (a) a step of providing an electrostatic chuck, a supporting substrate, and a metal bonding material, the electrostatic chuck being made of a ceramic and having a form of a flat plate, the supporting substrate including a composite material having a difference in linear thermal expansion coefficient at 40 to 570° C. from the ceramic of 0.2×10.sup.−6/K or less in absolute value, and (b) a step of interposing the metal bonding material between a concave face of the supporting substrate and a face of the electrostatic chuck opposite to a wafer mounting face, and thermocompression bonding the supporting substrate and the electrostatic chuck at a predetermined temperature to deform the electrostatic chuck to the shape of the concave face.