An armor component and manufacturing thereof which includes a ceramic hard material, where the hard material has a bulk density that is lower than 3.5 g/cm.sup.3 and includes grains of ceramic material having a Vickers hardness that is higher than 15 GPa, bonded by an bonding matrix, the bonding matrix representing between 20 and 80% by weight of the constituent hard material of the ceramic body, and including alumina, silicon nitride and TiC.sub.xN.sub.1-x crystalline phases, wherein x is included between 0 and 1.

There are provided a cubic boron nitride sintered body having a surface also excellent in adhesiveness to a ceramic coating film, while having excellent wear resistance and defect resistance, and a manufacturing method thereof, and a tool. The cubic boron nitride sintered body of the present invention includes 60.0 to 90.0% by volume of cubic boron nitride, the remainder being a binder phase, wherein the binder phase contains: at least any of a nitride, a boride, and an oxide of Al; at least any of a carbide, a nitride, a carbonitride, and a boride of Ti; and a compound represented by the following formula (1):
W.sub.2Ni.sub.xCo.sub.(1-x)B.sub.2(0.40≤x<1)  (1).

A cubic boron nitride sintered material includes: more than or equal to 50 volume % and less than 80 volume % of cubic boron nitride grains; and more than 20 volume % and less than or equal to 50 volume % of a binder phase, and when an oxygen content is measured in a direction perpendicular to an interface between cubic boron nitride grains using TEM-EDX, a first region having an oxygen content larger than an average value of an oxygen content of a cubic boron nitride grain exists, the interface exists in the first region, and a length of the first region along the direction perpendicular to the interface is more than or equal to 0.1 nm and less than or equal to 10 nm.

A method of making a polycrystalline cubic boron nitride (PCBN), material is provided. The matrix precursor powder comprises an aluminium compound. The method comprises mixing matrix precursor powder comprising particles having an average particle size no greater than 250 nm, with between 30 and 40 volume percent of cubic boron nitride (cBN) particles having an average particle size of at least 4 μm, and then spark plasma sintering the mixed particles. The spark plasma sintering occurs at a pressure of at least 500 MPa, a temperature of no less than 1050° C. and no more than 1500° C. and a time of no less than 1 minute and no more than 3 minutes.

A surface-coated cutting tool according to the present invention includes a tool body and a hard coating layer including a complex carbonitride layer containing a small amount of chlorine and (Ti.sub.(1-x)Zr.sub.xyHf.sub.x(1-y))(N.sub.(1-z)C.sub.z) (0.10≤x≤0.90, 0<y≤1.0, 0.08<z<0.60), a ZrHf and C content ratios in cycles, a cycle distance between a maximum ZrHf content point and an adjacent minimum ZrHf content point and a cycle distance between a maximum C content point and an adjacent minimum C content point are 5 to 100 nm, an average value of content ratio differences Δx and Δz is 0.02 or more, a distance between the maximum ZrHf content point and the maximum C content point is ⅕ or less of the distance between a maximum content point and a minimum content point of adjacent ZrHf components, and a composition fluctuation structure is 10% or more.

A cubic boron nitride sintered material includes: 20 to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, the ratio is more than or equal to 10% and less than or equal to 80%, and an average grain size of the second binder grains is more than or equal to 0.2 μm and less than or equal to 1 μm.

A cubic boron nitride sintered material includes: more than or equal to 20 volume % and less than 80 volume % of cubic boron nitride grains; and more than 20 volume % and less than or equal to 80 volume % of a binder phase, and when a carbon content is measured from a cubic boron nitride grain into the binder phase in a direction perpendicular to an interface between the cubic boron nitride grain and the binder phase using TEM-EDX, a first region having a carbon content larger than an average value of a carbon content of the binder phase exists, the interface exists in the first region, and a length of the first region is more than or equal to 0.1 nm and less than or equal to 10 nm.

A cubic boron nitride sintered material includes: 20 to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the number of atoms of the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, this ratio is more than or equal to 10% and less than or equal to 80%, and in an X-ray diffraction spectrum of the cubic boron nitride sintered material, one or both of conditions 1 and 2 are satisfied.

A sintered body containing polycrystalline grains of a metal oxynitride containing at least two metal elements, wherein Ba and at least one metal element of a crystal phase of the sintered body are contained in a triple point that is not a void between the polycrystalline grains. A method for producing the sintered body includes sintering a mixture of at least a metal oxynitride as a main component and a sintering aid containing cyanamide in an atmosphere containing nitrogen or a rare gas or in a reduced-pressure atmosphere of 10 Pa or less while applying a mechanical pressure with a retention time at a maximum heating temperature during the sintering set to 1 minute to 10 minutes.

A sputtering target containing silicon nitride (Si.sub.3N.sub.4) with reduced specific resistance of is provided. A sputtering target including Si.sub.3N.sub.4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ.Math.cm or less.