There is provided a polycrystalline cubic boron nitride containing a cubic boron nitride at a content greater than or equal to 98.5% by volume, the polycrystalline cubic boron nitride having a dislocation density less than or equal to 8×10.sup.15/m.sup.2.

To provide a sintered material having excellent oxidation resistance, as well as excellent abrasion resistance and chipping resistance. A sintered material containing a first compound formed of Ti, Al, Si, O, and N is provided.

A method of making a polycrystalline cubic boron nitride (PCBN), material is provided. The matrix precursor powder comprises an aluminium compound. The method comprises mixing matrix precursor powder comprising particles having an average particle size no greater than 250 nm, with between 30 and 40 volume percent of cubic boron nitride (cBN) particles having an average particle size of at least 4 μm, and then spark plasma sintering the mixed particles. The spark plasma sintering occurs at a pressure of at least 500 MPa, a temperature of no less than 1050° C. and no more than 1500° C. and a time of no less than 1 minute and no more than 3 minutes.

Provided is a wear resistant, sintered body made of a binderless carbide, cermet or cemented carbide, e.g., WC, W2C and/or eta-phase, with a grain size less than 6.0 μm, and less than 6% binder phase (e.g., Co—Ni—Fe). At least some working surfaces of the sintered body are surface treated with a boron yielding method including applying a low viscosity liquid medium having boron or aluminum content and heating at 1200° C. to 1450° C. under a pressure less than atmospheric pressure or a hydrogen containing atmosphere to from a hardness gradient with an increased hardness of the treated working surfaces of at least 50 to 200 HV5 and favorable compressive stresses in a surface zone that gives a tougher working surfaces of the boronized sintered bodies.

Provided is a cubic boron nitride sintered body including more than or equal to 85 volume percent and less than 100 volume percent of cubic boron nitride particles, and a remainder of a binder, wherein the binder contains WC, Co, and an Al compound, the binder contains W.sub.2Co.sub.21B.sub.6, and, when I.sub.A represents an X-ray diffraction intensity of a (111) plane of the cubic boron nitride particles, I.sub.B represents an X-ray diffraction intensity of a (100) plane of the WC, and I.sub.C represents an X-ray diffraction intensity of a (420) plane of the W.sub.2Co.sub.21B.sub.6, a ratio I.sub.C/I.sub.A of the I.sub.C to the I.sub.A is more than 0 and less than 0.10, and a ratio I.sub.C/I.sub.B of the I.sub.C to the I.sub.B is more than 0 and less than 0.40.

A polycrystalline cubic boron nitride comprising 98.5% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of more than 8×10.sup.15/m.sup.2, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of 0.1 μm or more and 0.5 μm or less.

A cubic boron nitride sintered material includes: more than 80 volume % and less than 100 volume % of cubic boron nitride grains; and more than 0 volume % and less than 20 volume % of a binder phase. The binder phase includes: at least one selected from a group consisting of a simple substance, an alloy, and an intermetallic compound selected from a group consisting of a group 4 element, a group 5 element, a group 6 element in a periodic table, aluminum, silicon, cobalt, and nickel. A dislocation density of the cubic boron nitride grains is more than or equal to 1×10.sup.15/m.sup.2 and less than or equal to 1×10.sup.17/m.sup.2.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

A sintered material includes a first phase and a second phase, wherein the first phase is composed of cubic boron nitride particles, and the following relational expressions are satisfied when more than or equal to two cubic boron nitride particles adjacent to and in direct contact with each other among the cubic boron nitride particles are defined as a contact body, Di represents a length of an entire perimeter of the contact body, n represents the number of contact locations at which the cubic boron nitride particles are in direct contact with each other, d.sub.k represents a length of each of the contact locations, and Σd.sub.k (where k=1 to n) represents a total length of the contact locations: Dii=Di+(2×Σd.sub.k (where k=1 to n)); and [(Dii−Di)/Dii]×100≤50.

A sintered material includes a cubic boron nitride, a zirconium-containing oxide, a zirconium-containing nitride, and an aluminum-containing oxide, wherein the zirconium-containing nitride includes both or one of ZrN and ZrON, and the aluminum-containing oxide includes a type Al.sub.2O.sub.3.