Patent classifications
C04B2235/3865
METHOD OF MANUFACTURING NITRIDE CERAMIC SUBSTRATE AND NITRIDE CERAMIC BASE MATERIAL
A scribe line is formed on a first surface of a nitride ceramic base material by a laser. Next, the nitride ceramic base material is divided along the scribe line. The scribe line includes a plurality of recessed portions. The plurality of recessed portions are formed in a row on the first surface of the nitride ceramic base material. A depth of each of the plurality of recessed portions is equal to or greater than 0.70 times and equal to or smaller than 1.10 times an opening width of each of the plurality of recessed portions. The opening width of each of the plurality of recessed portions is equal to or greater than 1.00 times and equal to or smaller than 1.10 times an inter-center distance of the plurality of recessed portions.
Sputtering Target, Manufacturing Method Therefor, And Manufacturing Method For Magnetic Recording Medium
A sputtering target containing silicon nitride (Si.sub.3N.sub.4) with reduced specific resistance of is provided. A sputtering target including Si.sub.3N.sub.4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ.Math.cm or less.
Phosphor particle, composite, light-emitting device, and method for producing phosphor particle
An α-sialon phosphor particle containing Eu. At least one slit is formed on a surface of the α-sialon phosphor particle. The α-sialon phosphor particle is preferably produced by undergoing a raw material mixing step, a heating step, a pulverizing step, and an acid treatment step.
Aluminum nitride sintered body, method of making the same, and semiconductor manufacturing equipment component using aluminum nitride sintered body
An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus is provided. The aluminum nitride sintered body exhibits, in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light, a highest emission intensity peak within a wavelength range of 580 nm to 620 nm.
INSERT AND CUTTING TOOL
An insert includes a cBN sintered compact including cBN particles and a binder phase binding the cBN particles. The cBN particles occupy 60% or more of the cross-sectional area of the cBN sintered compact. The binder phase contains Al compound particles containing at least one of AN or Al.sub.2O.sub.3. A particle distribution of the Al compound particles in a cumulative distribution based on the number of the Al compound particles in a cross section of the cBN sintered compact is as follows. The proportion of the Al compound particles with the particle diameter of 0.3 μm or larger is 5% or more, and the proportion of the Al compound particles with the particle diameter of 0.5 μm or larger is less than 5%.
LIGHT IRRADIATION TYPE COSMETIC APPARATUS AND ELECTRONIC DEVICE
Provided is a light irradiation type cosmetic apparatus including a light emitting device including: a light source that emits primary light; and a first phosphor that absorbs the primary light and converts the primary light into first wavelength-converted light having a wavelength longer than that of the primary light, wherein the light source is a solid-state light source having a rated output of 1 W or more, the primary light is light emitted from the solid-state light source, the first wavelength-converted light contains fluorescence based on an electron energy transition of Cr.sup.3+, and the first wavelength-converted light has a fluorescence spectrum having a fluorescence intensity maximum value in a wavelength range exceeding 710 nm.
Cubic boron nitride sintered material
A cubic boron nitride sintered material comprises 30% by volume or more and 99.9% by volume or less of cubic boron nitride grains and 0.1% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grain having a carbon content of 0.08% by mass or less, the cubic boron nitride sintered material being free of free carbon.
CERAMIC MATERIAL HAVING HIGH RESISTIVITY AND HIGH CORROSION RESISTANCE, AND WAFER PLACEMENT TABLE
A ceramic material that has a high resistivity and high corrosion resistance according to the present invention contains magnesium-aluminum oxynitride and has a carbon content of 0.005 to 0.275 mass %.
Tuning the piezoelectric and mechanical properties of the ALN system via alloying with YN and BN
Methods and materials are disclosed for simultaneously optimizing both the piezoelectric and mechanical properties of wurtzite piezoelectric materials based on the AlN wurtzite and alloyed with one or two end-members from the set BN, YN, CrN, and ScN.
Laminated ceramic sintered body board for electronic device, electronic device, chip resistor, and method for manufacturing chip resistor
A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.