The cubic boron nitride sintered material is a cubic boron nitride sintered material comprising: cubic boron nitride particles in an amount of 70 vol % or more and less than 100 vol %, and a bonding material, wherein the bonding material includes an aluminum compound, and includes cobalt as a constituent element; the cubic boron nitride sintered material has a first region in which a space between adjacent cubic boron nitride particles is 0.1 nm or more and 10 nm or less; and when the first region is analyzed by using an energy dispersive X-ray analyzer equipped with a transmission electron microscope, the atom % of aluminum in the first region is 0.1 or more.

An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y.sub.2O.sub.3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.

A method of manufacturing a heating block includes a first step of providing a ceramic material to a mold, a second step of sintering the ceramic material and forming a plate, and a third step of machining the plate. A shaft is connected to the plate in a fourth step, and rods are bonded to the plate in a fifth step of the method. Heating blocks and semiconductor processing systems having heating blocks are also described.

According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase, and in a case where Raman spectroscopy of a 20 μm×20 μm region in a central cross section of the silicon nitride sintered body is performed, two or more peaks are detected in ranges of 780 cm.sup.−1 to 810 cm.sup.−1 and 1340 cm.sup.−1 to 1370 cm.sup.−1, and four to six peaks are detected in ranges of 170 cm.sup.−1 to 190 cm.sup.−1, 607 cm.sup.−1 to 627 cm.sup.−1, 720 cm.sup.−1 to 740 cm.sup.−1, and 924 cm.sup.−1 to 944 cm.sup.−1.

A cubic boron nitride sintered material includes: 20 to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the number of atoms of the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, this ratio is more than or equal to 10% and less than or equal to 80%, and in an X-ray diffraction spectrum of the cubic boron nitride sintered material, one or both of conditions 1 and 2 are satisfied.

A cubic boron nitride sintered material includes: 20 t to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, the ratio is more than or equal to 10% and less than or equal to 80%, and an average grain size of the second binder grains is more than or equal to 0.2 μm and less than or equal to 1 μm.

According to an example, a green body may include from about 1 wt. % to about 20 wt. % of a metal nanoparticle binder and a build material powder, wherein the metal nanoparticle binder is selectively located within an area of the green body to impart a strength greater than about 3 MPa.

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al.sub.2O.sub.3 substrate placed in the reaction chamber.

A base plate containing a having a top and a bottom and comprising a beryllium oxide composition containing at least 95 wt % beryllium oxide and optionally fluorine/fluoride ion. The base plate demonstrates a clamping pressure of at least 133 kPa at a temperature of at least 600° C. and a bulk resistivity greater than 1×10.sup.5 ohm-m at 800° C.

A material powder for additive modeling including a nitride, and a eutectic oxide, the nitride having an average density lower than an average density of the eutectic oxide, is used to produce a structure using an additive modeling method.