Patent classifications
C04B2235/3873
METHOD OF MANUFACTURING NITRIDE CERAMIC SUBSTRATE AND NITRIDE CERAMIC BASE MATERIAL
A scribe line is formed on a first surface of a nitride ceramic base material by a laser. Next, the nitride ceramic base material is divided along the scribe line. The scribe line includes a plurality of recessed portions. The plurality of recessed portions are formed in a row on the first surface of the nitride ceramic base material. A depth of each of the plurality of recessed portions is equal to or greater than 0.70 times and equal to or smaller than 1.10 times an opening width of each of the plurality of recessed portions. The opening width of each of the plurality of recessed portions is equal to or greater than 1.00 times and equal to or smaller than 1.10 times an inter-center distance of the plurality of recessed portions.
Sputtering Target, Manufacturing Method Therefor, And Manufacturing Method For Magnetic Recording Medium
A sputtering target containing silicon nitride (Si.sub.3N.sub.4) with reduced specific resistance of is provided. A sputtering target including Si.sub.3N.sub.4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ.Math.cm or less.
Phosphor particle, composite, light-emitting device, and method for producing phosphor particle
An α-sialon phosphor particle containing Eu. At least one slit is formed on a surface of the α-sialon phosphor particle. The α-sialon phosphor particle is preferably produced by undergoing a raw material mixing step, a heating step, a pulverizing step, and an acid treatment step.
METHOD FOR PREPARING SILICON-CARBIDE-SILICON-NITRIDE COMPOSITE MATERIAL, AND SILICON-CARBIDE-SILICON-NITRIDE COMPOSITE MATERIAL ACCORDING TO SAME
The present invention relates to a method for preparing a SiC—Si.sub.3N.sub.4 composite material and a SiC—Si.sub.3N.sub.4 composite material prepared according to same and comprises the steps of: preparing a mold; and forming a SiC—Si.sub.3N.sub.4 composite material by introducing, to the mold, a source gas comprising Si, N and C, at 1100 to 1600° C. More particularly, the present invention provides the SiC—Si.sub.3N.sub.4 composite material of high purity that is applicable to a semiconductor process, and increases the thermal shock strength of a SiC material by causing Si.sub.3N.sub.4, which is a material with a high thermal shock strength, to grow together via a CVD method.
SYSTEMS AND METHODS FOR HOT-ISOSTATIC PRESSING TO INCREASE NITROGEN CONTENT IN SILICON NITRIDE
Methods and systems for manufacturing a ceramic or glass material component supersaturated in nitrogen are disclosed. The method for manufacturing a component typically comprises receiving the ceramic or glass material within a containment vessel; simultaneously heating and applying isostatic pressure to the ceramic or glass material within the containment vessel to a first temperature and a first pressure using pressurizing nitrogen gas; holding the first temperature and the first pressure for a period of time; cooling the ceramic or glass material within the containment vessel to a second temperature while maintaining the first pressure; and depressurizing the containment vessel to a second pressure.
SILICON NITRIDE SINTERED BODY, ROLLING ELEMENT USING THE SAME, AND BEARING
To provide: a silicon nitride sintered body having excellent mechanical property, in particular fracture toughness, and having long lifetime of a product into which the silicon nitride sintered body is processed; a rolling element using the silicon nitride sintered body; and a bearing. The silicon nitride sintered body contains a rare earth element and an aluminum element. The silicon nitride sintered body contains 6-13 wt % of the rare earth element in terms of oxide, and 6-13 wt % of the aluminum element in terms of oxide, relative to the total weight of the silicon nitride sintered body. The silicon nitride sintered body contains an inclusion (I) in a surface layer portion that is a region within 2 mm from a surface of the silicon nitride sintered body. A ratio of a total sectional area of the inclusion (I) to a total sectional area of the surface layer portion is 0.05% or more.
Method of altering a surface of a ceramic matrix composite to aid in nodule removal
A method of altering a surface of a ceramic matrix composite to aid in nodule removal is described. A fiber preform comprising a framework of ceramic fibers is heated to a temperature at or above a melting temperature of silicon. During the heating, the fiber preform is infiltrated with a molten material comprising silicon. After the infiltration, the fiber preform is cooled, and the infiltrated fiber preform is exposed to a gas comprising nitrogen during cooling. Silicon nitride may be formed by a reaction of free (unreacted) silicon at or near the surface of the infiltrated fiber preform with the nitrogen. Thus, a ceramic matrix composite having a surface configured for easy nodule removal is formed. Any silicon nodules formed on the surface during cooling may be removed without machining or heat treatment.
Laminated ceramic sintered body board for electronic device, electronic device, chip resistor, and method for manufacturing chip resistor
A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.
LAMINATED CERAMIC SINTERED BODY BOARD FOR ELECTRONIC DEVICE, ELECTRONIC DEVICE, CHIP RESISTOR, AND METHOD FOR MANUFACTURING CHIP RESISTOR
A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.
Method for producing ceramic sintered body, ceramic sintered body, and light emitting device
Provided are a method for producing a ceramic sintered body having improved light emission intensity, a ceramic sintered body, and a light emitting device. The method for producing a ceramic sintered body comprises preparing a molded body that contains a nitride fluorescent material having a composition containing: at least one alkaline earth metal element M.sup.1 selected from the group consisting of Ba, Sr, Ca, and Mg; at least one metal element M.sup.2 selected from the group consisting of Eu, Ce, Tb, and Mn; Si; and N, wherein a total molar ratio of the alkaline earth metal element M.sup.1 and the metal element M.sup.2 in 1 mol of the composition is 2, a molar ratio of the metal element M.sup.2 is a product of 2 and a parameter y and wherein y is in a range of 0.001 or more and less than 0.5, a molar ratio of Si is 5, and a molar ratio of N is 8, and wherein the nitride fluorescent material has a crystallite size, as calculated by X-ray diffraction measurement using the Halder-Wagner method, of 550 Å or less, and calcining the molded body at a temperature in a range of 1,600° C. or more and 2,200° C. or less to obtain a sintered body.