A multi-layer ceramic capacitor includes: a first region including a polycrystal including, as a main component, crystal grains free from intragranular pores; a second region that includes a polycrystal including, as a main component, crystal grains including intragranular pores and includes a higher content of silicon than a content of silicon in the first region; a capacitance forming unit including ceramic layers laminated along a first direction, and internal electrodes disposed between the ceramic layers; and a protective portion including a cover that covers the capacitance forming unit and constitutes a main surface facing in the first direction, a side margin constituting a side surface facing in a second direction orthogonal to the first direction, and a ridge constituting a connection portion, the connection portion connecting the main surface and the side surface to each other. The ceramic layers include the first region. The ridge includes the second region.

The present invention relates to a SiC composite and a method for manufacturing the same. More particularly, the present invention relates to a slurry composition for ceramic matrix composites which can not only reduce the number of precursor impregnation pyrolysis (PIP) cycles but also be useful in the PIP process to increase hardness, thermal stability, and relative density.

Disclosed herein is a sintered ceramic body comprising from 90% to 99.9% by volume of polycrystalline yttrium aluminum garnet (YAG) as measured using XRD and image processing methods and a volumetric porosity of from 0.1 to 4% as calculated from density measurements performed in accordance with ASTM B962-17. The sintered ceramic body may have a total purity of 99.99% and greater and a grain size of from 0.3 to 8 μm. A method of making the sintered ceramic body is also disclosed.

A ceramic powder material containing a garnet-type compound containing Li, wherein the ceramic powder material has a pore volume of 0.4 mL/g or more and 1.0 mL/g or less.

A Li ion conductor having a composition different from a conventional composition is provided. The Li ion conductor contains at least one selected from a group Q consisting of Ga, V, and Al, Li, La and O. A part of an Li site is optionally substituted with a metal element D, a part of an La site is optionally substituted with a metal element E, and parts of Ga, V and Al sites are optionally substituted with a metal element J. A mole ratio of an amount of Li to a total amount of La, the element E, Ga, V, Al, and the element J is not lower than 8.1/5 and not higher than 9.5/5. A mole ratio of a total amount of Ga, V, and Al to a total amount of La and the element E is not lower than 1.1/3 and not higher than 2/3.

Polycrystalline cubic boron nitride, PCBN, material and methods of making PCBN. A method includes providing a matrix precursor powder comprising particles having an average particle size no greater than 250 nm, providing a cubic boron nitride, cBN, powder comprising particles of cBN having an average particle size of at least 0.2 intimately mixing the matrix precursor powder and the cBN powder, and sintering the intimately mixed powders at a temperature of at least 1100° C. and a pressure of at least 3.5 GPa to form the PCBN material comprising particles of cubic boron nitride, cBN dispersed in a matrix material.

A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal crystal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B.sub.2O.sub.3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries having a maximum length of 0.088 or more and less than 0.49 μm per cross-sectional area of 76 μm.sup.2 is P, P is 8 or more.

A powder intended for the manufacture of a sintered dental article, The powder has a chemical analysis such that, as weight percentages based on the oxides: Al.sub.2O.sub.3: 0.2%, oxides other than ZrO.sub.2, HfO.sub.2, Yb.sub.2O.sub.3, Y.sub.2O.sub.3 and Al.sub.2O.sub.3: <0.5%, and ZrO.sub.2+HfO.sub.2+Yb.sub.2O.sub.3+Y.sub.2O.sub.3: balance to 100%, with HfO.sub.2<2%. The contents of Yb.sub.2O.sub.3 and Y.sub.2O.sub.3, as molar percentages based on the sum of ZrO.sub.2, HfO.sub.2, Yb.sub.2O.sub.3 and Y.sub.2O.sub.3, being such that Yb.sub.2O.sub.3≥1%, 0.5%≤Y.sub.2O.sub.3<2%, and Yb.sub.2O.sub.3+Y.sub.2O.sub.3≤5.5%. The powder has a specific surface area of greater than or equal to 5 m.sup.2/g and less than or equal to 16 m.sup.2/g. The powder has a median size of greater than or equal to 0.1 μm and less than or equal to 0.7 μm.

The present disclosure relates to a ceramic component including a boron carbide, wherein a difference of a first residual stress measured at a first spot on a surface of the ceramic component and a second residual stress measured at a second spot on the surface having different distance from a center of the surface than the first spot is −600 to +600 MPa.