A method of producing polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y (Y-358) whereby powders of yttrium (III) oxide, a barium (II) salt, and copper (II) oxide are pelletized, calcined at 850 to 950° C. for 8 to 16 hours, ball milled under controlled conditions, pelletized again and sintered in an oxygen atmosphere at 900 to 1000° C. for up to 72 hours. The polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y thus produced is in the form of elongated crystals having an average length of 2 to 10 μm and an average width of 1 to 2 μm, and embedded with spherical nanoparticles of yttrium deficient Y.sub.3Ba.sub.5Cu.sub.8O.sub.y having an average diameter of 5 to 20 nm. The spherical nanoparticles are present as agglomerates having flower-like morphology with an average particles size of 30 to 60 nm. The ball milled polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y prepared under controlled conditions shows significant enhancement of superconducting and flux pinning properties.

Polycrystalline cubic boron nitride, PCBN, material and methods of making PCBN. A method includes providing a matrix precursor powder comprising particles having an average particle size no greater than 250 nm, providing a cubic boron nitride, cBN, powder comprising particles of cBN having an average particle size of at least 0.2 μm, intimately mixing the matrix precursor powder and the cBN powder, and sintering the intimately mixed powders at a temperature of at least 1100° C. and a pressure of at least 3.5 GPa to form the PCBN material comprising particles of cubic boron nitride, cBN dispersed in a matrix material.

A capacitor includes a stack and an external electrode located on a surface of the stack. The stack includes a plurality of dielectric layers and a plurality of internal electrode layers alternately stacked on one another. Crystal grains include first crystal grains having a small grain size and second crystal grains having a larger grain size. The first crystal grains satisfy 0.13 μm≤d1<0.30 μm, where d1 is the grain size of the first crystal grains. The second crystal grains satisfy 0.30 μm≤d2<0.50 μm, where d2 is the grain size of the second crystal grains. The second crystal grains have a higher additive element content than the first crystal grains.

A ceramic electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell. The dual shell includes a first shell surrounding at least a portion of the core, and a second shell surrounding at least a portion of the first shell, and a concentration of a rare earth element included in the second shell is more than 1.3 times to less than 3.8 times a concentration of a rare earth element included in the first shell.

A preform intended for the production of a dental prosthesis. The preform includes a group of agglomerated ceramic, glass-ceramic or glass particles, such that, as volume percents: more than 40% and less than 90% of the particles of said group have a size greater than 0.5 μm and less than 3.5 μm, said particles hereinafter being denoted “enamel particles”, and more than 10% and less than 60% of the particles of said group have a size greater than 3.5 μm and less than 5.5 μm, said particles hereinafter being denoted “dentine particles.” The microstructure of the preform is such that there is an axis X, termed “axis of variation”, along which the Ve/(Ve+Vd) ratio changes continuously, Ve and Vd denoting the volume percents of enamel particles and of dentine particles, respectively. The enamel and dentine particles representing, together, more than 90% of the volume of the agglomerated particles.

Provided is a boron nitride sintered body including: a plurality of coarse particles each having a length of 20 μm or more; and fine particles smaller than the plurality of coarse particles, in which, when viewed in a cross-section, the plurality of coarse particles intersect with each other. Provided is a method for manufacturing a boron nitride sintered body, the method including: a raw material preparation step of firing a mixture containing boron carbonitride and a boron compound in a nitrogen atmosphere to obtain lump boron nitride having an average particle diameter of 10 to 200 μm; and a sintering step of molding and heating a blend containing the lump boron nitride and a sintering aid to obtain a boron nitride sintered body including coarse particles each having a length of 20 μm or more in a cross-section and fine particles smaller than the coarse particles.

A cBN sintered material comprising cBN particles and a binder phase, in which the binder phase contains AlN and AlB.sub.2, a content proportion of cBN particles is 70 to 97 vol %, cBN sintered material has a volume resistivity up to 5×10.sup.−3 Ωcm, a rate of a peak intensity derived from Al with respect to a peak intensity derived from cBN particles is less than 1.0%, cBN particles include fine particles and coarse particles, coarse particles optionally include ultra-coarse particles, with respect to the entire cBN particles, a content proportion α of fine particles is from 10 vol %, a content proportion β of coarse particles is from 30 vol %, a content proportion γ of ultra-coarse particles is 25 vol % or less, and a total of the content proportion α of fine particles and the content proportion β of coarse particles is 50 to 100 vol %.

A light-emitting ceramic and a light-emitting device. The light-emitting ceramic comprises a YAG substrate and light-emitting centers and diffusion particles evenly dispersed in the YAG substrate. The light-emitting centers are lanthanide-doped YAG fluorescent powder particles of 10-20 μm in grain size. The particle size of the scattering particles is 20-50 nm. The YAG substrate is a lanthanide-doped YAG ceramic. Also, the grain size of the YAG substrate is less than the grain size of the YAG fluorescent powder particles.

Polycrystalline diamond compacts having interstitial diamonds and methods of forming polycrystalline diamond compact shaving interstitial diamonds with a quench cycle are described herein. In one embodiment, a polycrystalline diamond compact includes a substrate and a polycrystalline diamond body attached to the substrate. The polycrystalline diamond body includes a plurality of inter-bonded diamond grains that are attached to one another in an interconnected network of diamond grains and interstitial pockets between the inter-bonded diamond grains, and a plurality of interstitial diamond grains that are positioned in the interstitial pockets. Each of the plurality of interstitial diamond grains are attached to a single diamond grain of the interconnected network of diamond grains or other interstitial diamond grains.

An orthodontic bracket for coupling an archwire with a tooth. The orthodontic bracket including a ceramic injection molded (CIM) bracket body including an archwire slot that is configured to receive the archwire therein. The CIM bracket body including a polycrystalline ceramic. A coating of alumina or silicon dioxide is in continuous and direct contact with at least the surfaces of the archwire slot. The orthodontic bracket is characterized by unexpectedly high torque strength. The ceramic injection molded (CIM) bracket body may include a polycrystalline ceramic having a grain size distribution characterized by an average grain size in the range of larger than 3.4 μm to about 6 μm such that the orthodontic bracket is also characterized by unexpectedly high fracture toughness. A method of making the orthodontic bracket includes injection molding a bracket using a ceramic powder, sintering the molded bracket, and coating the ceramic injection molded bracket.