A multilayer ceramic capacitor includes: a multilayer structure in which each of dielectric layers and each of internal electrode layers are stacked, wherein a relationship of 8.0≥I.sub.A/I.sub.B>1.40 is satisfied in a TSDC (Thermally Stimulated Depolarization Currents) of temperature elevation rate of 10 degrees C./min under a condition of 130 degrees C., 5 V/μm and a polarization of 30 min, when a peak current value on a lower temperature side in a temperature range of 130 degrees C. to 190 degrees C. is I.sub.A and a peak current value on a higher temperature side in a temperature range of 190 degrees C. to 280 degrees C. is I.sub.B.

A ceramic electronic device includes: a multilayer structure in which each of dielectric layers and each of internal electrode layers are alternately stacked, a main component of the dielectric layers being ceramic, wherein a relationship of I.sub.A/I.sub.B>1.40 is satisfied in a TSDC (Thermally Stimulated Depolarization Currents) of temperature elevation rate of 10 degrees C./min under a condition of 130 degrees C., 5 V/μm and a polarization of 30 min, when a peak current value on a lower temperature side in a temperature range of 130 degrees C. to 190 degrees C. is I.sub.A and a peak current value on a higher temperature side in a temperature range of 190 degrees C. to 280 degrees C. is I.sub.B.

A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

The invention relates to the field of ceramics and concerns a method for use in displays of electronic devices with high mechanical stress, for example. The object of the present invention is to provide a method by means of which thin ceramic parts having thicknesses of substantially <1 mm with high transparency are produced. The object is achieved by a method for producing thin transparent ceramic parts, in which ceramic powders are mixed together with a solvent and a monomer and a photoinitiator, and at least 0.0005% by mass of a photoinitiator is added, the mixture is subsequently introduced into a mould, then the mixture is irradiated for at least 1 min with light which has a wavelength for activating the photoinitiator, the moulded body is subsequently removed from the mould and dried, and then the debinding and sintering of the moulded body is carried out.

A preparation method for a ceramic composite material, a ceramic composite material, and a wavelength converter. The preparation method comprises: preparing an aluminium salt solution and a fluorescent powder; dispersing the fluorescent powder into a buffer solution having a pH 4.5-5.5 to obtain a suspension; titrating the suspension with the aluminium salt solution to obtain a fluorescent powder coated with Al.sub.2O.sub.3 hydrate film; calcining the fluorescent powder coated with Al.sub.2O.sub.3 hydrate film to obtain a Al.sub.2O.sub.3-coated fluorescent powder; mixing aluminium oxide powder with a particle size of 0.1 μm-1 μm and aluminium oxide powder with a particle size of 1 μm-10 μm to obtain mixed aluminium oxide powder; mixing the Al.sub.2O.sub.3-coated fluorescent powder and the mixed aluminium oxide powder to obtain mixed powder, the Al.sub.2O.sub.3-coated fluorescent powder being present in 40%-90% by weight of the mixed powder; and pre-pressing and sintering the mixed powder to obtain the ceramic composite material.

Embodiments disclosed herein are related to polycrystalline textured materials exhibiting heterogeneous templated grain growth, methods of forming such materials, and related systems. An example of a method of forming a polycrystalline textured material exhibiting heterogeneous templated grain growth includes providing a plurality of seeds. The method also includes aligning at least some of the plurality of seeds (e.g., single-crystal seeds) so that a selected crystallographic orientation of at least some of the plurality of seeds are substantially aligned with each other. Additionally, the method includes positioning the plurality of seeds in a powder matrix. The method then includes pressing the plurality of seeds and the powdered matrix to form a green body. Further, the method includes sintering the green body at a temperature that is sufficient to grow a plurality of grains from corresponding ones of the plurality of seeds to form the polycrystalline textured material.

A method of producing polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y (Y-358) whereby powders of yttrium (III) oxide, a barium (II) salt, and copper (II) oxide are pelletized, calcined at 850 to 950° C. for 8 to 16 hours, ball milled under controlled conditions, pelletized again and sintered in an oxygen atmosphere at 900 to 1000° C. for up to 72 hours. The polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y thus produced is in the form of elongated crystals having an average length of 2 to 10 μm and an average width of 1 to 2 μm, and embedded with spherical nanoparticles of yttrium deficient Y.sub.3Ba.sub.5Cu.sub.8O.sub.y having an average diameter of 5 to 20 nm. The spherical nanoparticles are present as agglomerates having flower-like morphology with an average particles size of 30 to 60 nm. The ball milled polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y prepared under controlled conditions shows significant enhancement of superconducting and flux pinning properties.

A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

A sintered rare earth oxyfluoride compact is composed of Ln.sub.aO.sub.bF.sub.c (wherein Ln is a rare earth element; and a, b, and c each independently represent a positive number, provided that they are not equal to each other) or Ca-stabilized LnOF as a primary phase and LnOF unstabilized with Ca as a secondary phase. The intensity ratio of the XRD peak of the (018) or (110) plane of the unstabilized LnOF to the highest XRD peak of Ln.sub.aO.sub.bF.sub.c is preferably 0.5% to 30%.

An alumina sintered body including an inner layer in which alumina crystal grains contained have an average aspect ratio of 1.0 to 2.0 and an outer layer which covers at least a part of the inner layer from outside and in which alumina crystal grains contained have an average aspect ratio of more than 2.0, the alumina sintered body being free from silicon except unavoidable impurities.