C04B2235/783

Ceramic electronic device and manufacturing method of the same
12014877 · 2024-06-18 · ·

A ceramic electronic device includes: a multilayer structure; and a cover layer, wherein a concentration of Mn of the cover layer with respect to a main component ceramic is larger than a concentration of Mn of the dielectric layers with respect to a main component ceramic in a capacity section, wherein an average crystal grain diameter of a first dielectric layer is smaller than that of a second dielectric layer, and a concentration of Mn of the first dielectric layer with respect to the main component ceramic is larger than a concentration of Mn of the second dielectric layer with respect to the main component ceramic, in the capacity section.

Sintered Polycrystalline Cubic Boron Nitride Material

Polycrystalline cubic boron nitride, PCBN, material and methods of making PCBN. A method includes providing a matrix precursor powder comprising particles having an average particle size no greater than 250 nm, providing a cubic boron nitride, cBN, powder comprising particles of cBN having an average particle size of at least 0.2 intimately mixing the matrix precursor powder and the cBN powder,and sintering the intimately mixed powders at a temperature of at least 1100 C. and a pressure of at least 3.5 GPa to form the PCBN material comprising particles of cubic boron nitride, cBN dispersed in a matrix material.

PREFORM FOR THE PRODUCTION OF A DENTAL PROSTHESIS
20190091110 · 2019-03-28 ·

A preform intended for the production of a dental prosthesis. The preform includes a group of agglomerated ceramic, glass-ceramic or glass particles, such that, as volume percents: more than 40% and less than 90% of the particles of said group have a size greater than 0.5 ?m and less than 3,5 ?m, said particles hereinafter being denoted enamel particles, and more than 10% and less than 60% of the particles of said group have a size greater than 3.5 ?m and less than 5.5 ?m, said particles hereinafter being denoted dentine particles. The microstructure of the preform is such that there is an axis X, termed axis of variation, along which the Ve/(Ve+Vd) ratio changes continuously, Ve and Vd denoting the volume percents of enamel particles and of dentine particles, respectively. The enamel and dentine particles representing, together, more than 90% of the volume of the agglomerated particles.

Multilayer electronic component and dielectric composition
12046421 · 2024-07-23 · ·

A multilayer electronic component includes a body including a plurality of dielectric layers, wherein, wherein a central portion of the capacitance formation portion is Aa, a boundary portion of the capacitance formation portion, adjacent to the cover portions, is Ab, a dielectric grain size corresponding to the top 50% of dielectric grains, in order of enlargement, from the smallest grain size, among a plurality of dielectric grains included in Aa, is D50a, and a dielectric grain size corresponding to the top 50% of dielectric grains, in order of enlargement, from the smallest grain size, among a plurality of dielectric grains included in Ab, is D50b, D50a satisfies 190 nm or less and D50b satisfies 120 nm or greater.

MULTILAYER ELECTRONIC COMPONENT

A multilayer electronic component includes a body including a capacitance formation portion including a dielectric layer and an internal electrode alternately disposed in a first direction, and a cover portion disposed on both end surfaces of the capacitance formation portion opposing each other in the first direction, and an external electrode disposed on the outside of the body and connected to the internal electrode. The cover portion has a first region, adjacent to the capacitance formation portion, and a second region, adjacent to the outside of the cover portion. A content of fluorine (F) included in the second region is greater than a content of fluorine (F) included in the first region.

SHOWER PLATE, SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SHOWER PLATE

A shower plate according to the present disclosure includes a ceramic sintered body, the ceramic sintered body comprising a first surface, a second surface facing the first surface, and a through hole positioned between the first surface and the second surface. An inner surface of the through hole includes a protruding crystal grain which protrudes more than an exposed part of a grain boundary phase existing between crystal grains. In addition, a semiconductor manufacturing apparatus according to the present disclosure includes the shower plate mentioned above.

MATERIAL, USE THEREOF AND METHOD TO MANUFACTURE SAID MATERIAL
20180282220 · 2018-10-04 · ·

Material, use thereof and method to manufacture said material; wherein the material is porous and has: a total porosity ranging from 50% to 80%, in particular from 60% to 70%; interconnected pores; at least a part made of a hydrophilic material, in particular at least a part of the inner surfaces of the pores is made of a hydrophilic material; a permeability coefficient (k) greater than 106 m/sec; and wherein, in a given volume of the material (1), the total volume of pores with a diameter ranging from 0.1.Math. to approximately 0.3 nm is at least greater than 15% of the total volume of the pores, preferably it ranges from 15 to 36%.

POLYCRYSTALLINE TEXTURED MATERIALS EXHIBITING HETEROGENEOUS TEMPLATED GRAIN GROWTH, METHODS OF FORMING THE SAME, AND RELATED SYSTEMS

Embodiments disclosed herein are related to polycrystalline textured materials exhibiting heterogeneous templated grain growth, methods of forming such materials, and related systems. An example of a method of forming a polycrystalline textured material exhibiting heterogeneous templated grain growth includes providing a plurality of seeds. The method also includes aligning at least some of the plurality of seeds (e.g., single-crystal seeds) so that a selected crystallographic orientation of at least some of the plurality of seeds are substantially aligned with each other. Additionally, the method includes positioning the plurality of seeds in a powder matrix. The method then includes pressing the plurality of seeds and the powdered matrix to form a green body. Further, the method includes sintering the green body at a temperature that is sufficient to grow a plurality of grains from corresponding ones of the plurality of seeds to form the polycrystalline textured material.

CUBIC BORON NITRIDE POLYCRYSTALLINE MATERIAL, CUTTING TOOL, WEAR RESISTANT TOOL, GRINDING TOOL, AND METHOD OF MANUFACTURING CUBIC BORON NITRIDE POLYCRYSTALLINE MATERIAL
20180265416 · 2018-09-20 ·

It is an object to provide a cubic boron nitride polycrystalline material excellent in toughness. A cubic boron nitride polycrystalline material containing fine cubic boron nitride which is granular, has a maximum grain size not greater than 100 nm, and has an average grain size not greater than 70 nm and at least one of plate-shaped cubic boron nitride in a form of a plate having an average major radius not smaller than 50 nm and not greater than 10000 nm and coarse cubic boron nitride which is granular, has a minimum grain size exceeding 100 nm, and has an average grain size not greater than 1000 nm is provided.

SINTERED ALUMINA-BASED AND ZIRCONIA-BASED PRODUCT

Sintered product having a chemical analysis such that, in percentages by mass based on the oxides, ZrO2 partially stabilised with CeO2 and Y2O3: remainder up to 100%, Al2O3: >10% and <19%of an additive selected from CaO, the oxides of manganese, ZnO, the oxides of praseodymium, SrO, the oxides of copper, Nd2O3, BaO, the oxides of iron, and mixtures thereof: 0.2-6%, impurities: <2%, CeO2 and Y2O3 being present in quantities such that, in molar percent based on the sum of ZrO2, CeO2 and Y2O3, CeO2: 2.5 mol % and <5.5 mol %, and Y2O3: 0.5-2 mol %.