Patent classifications
C04B2237/346
CERAMIC ELECTRONIC DEVICE, POWDER MATERIAL, PASTE MATERIAL, AND MANUFACTURING METHOD OF CERAMIC ELECTRONIC DEVICE
A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers of which a main component is ceramic, and each of a plurality of internal electrode layers are alternately stacked. The plurality of internal electrode layers include Ni, S and Sn.
PROCESSES AND MATERIALS FOR CASTING AND SINTERING GREEN GARNET THIN FILMS
Set forth herein are processes and materials for making ceramic thin films by casting ceramic source powders and precursor reactants, binders, and functional additives into unsintered thin films and subsequently sintering the thin films under controlled atmospheres and on specific substrates.
INORGANIC FIBER TUBULAR STRUCTURES, AND SYSTEM AND METHOD FOR MANUFACTURING THE INORGANIC FIBER TUBULAR STRUCTURES
An AC-electrospinning system and a method are provided for fabricating inorganic fiber tubular structures. The AC-electrospinning system preferably uses an electrode system that comprises an electrical charging component electrode and at least one of an AC field attenuating component and a precursor liquid attenuating component. Use of the AC-electrospinning process to fabricate the inorganic fiber tubular structures allows the structures to be made with high porosities that are not achievable using the conventional approach.
Ceramic electronic device
A ceramic electronic device includes: a multilayer structure in which each of dielectric layers and each of internal electrode layers are alternately stacked, a main component of the dielectric layers being ceramic, wherein a relationship of I.sub.A/I.sub.B>1.40 is satisfied in a TSDC (Thermally Stimulated Depolarization Currents) of temperature elevation rate of 10 degrees C./min under a condition of 130 degrees C., 5 V/μm and a polarization of 30 min, when a peak current value on a lower temperature side in a temperature range of 130 degrees C. to 190 degrees C. is I.sub.A and a peak current value on a higher temperature side in a temperature range of 190 degrees C. to 280 degrees C. is I.sub.B.
MULTILAYER ELECTRONIC COMPONENT
A multilayer electronic component includes a body including a plurality of dielectric layers, side margin portions disposed on the body, and external electrodes disposed on the body. The reliability of the multilayer electronic component is improved by controlling the contents of Si for each position of the dielectric layer and the side margin portion.
MULTILAYER CERAMIC ELECTRONIC COMPONENT
A multilayer ceramic electronic component includes: a ceramic body including a dielectric layer having a main component represented by (Ba.sub.1-xCa.sub.x)(Ti.sub.1-y)(Zr, Sn, Hf).sub.y)O.sub.3 (where, 0≤x≤1, 0≤y≤0.5), and having a plurality of grains and grain boundaries disposed between the plurality of grains, and including first and second internal electrodes alternately stacked with the dielectric layer interposed therebetween; a first external electrode; and a second external electrode, wherein the dielectric layer includes a triple point in contact with three grain boundaries and a secondary phase of Si disposed inside the triple point, wherein a dispersion of an Si content at an interface between the dielectric layer and the internal electrode may be 1% by weight or less.
Multilayer electronic component and method for manufacturing multilayer electronic component
A multilayer electronic component having a plurality of stacked dielectric layers and a plurality of internal electrode layers. Each of the dielectric layers has a plurality of crystal grains including a perovskite-type compound containing Ba, a first rare earth element and a second rare earth element. A difference between a positive trivalent ion radius of the first rare earth element and a positive divalent ion radius of Ba is smaller than a difference between a positive trivalent ion radius of the second rare earth element and the positive divalent ion radius of Ba. A sum of an amount of the first rare earth element and the second rare earth element in a first region along a grain boundary is larger than a sum of an amount of the first rare earth element and the second rare earth element in a second region in a center portion of the crystal grain.
DIELECTRIC CERAMIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT USING THE SAME
A dielectric ceramic composition includes a base material main component of barium titanate and a subcomponent. A microstructure of the dielectric ceramic composition after sintering includes a first grain having a Ca content of less than 3.5 at % and a second grain having a Ca content of 3.5 to 13.5 at %, and an area ratio of the second grain to an area of the total grains is 70% to 95%.
DIELECTRIC CERAMIC COMPOSITION AND MULTILAYER CERAMIC CAPACITOR COMPRISING THE SAME
A dielectric ceramic composition and a multilayer ceramic capacitor including the same are provided. The dielectric ceramic composition includes a BaTiO.sub.3-based base material main ingredient and an accessory ingredient, where the accessory ingredient includes dysprosium (Dy) and niobium (Nb) as first accessory ingredients. A total content of the Dy and Nb is greater than 0.2 mol and less than or equal to 1.5 mol based on 100 mol of titanium (Ti) of the base material main ingredient.
Method of producing three-dimensional object and production apparatus used therefor
A three-dimensional object is obtained by repeating multiple times forming a ceramic powder layer formed of a ceramic powder and applying to a desired region of the ceramic powder layer a liquid precursor composition at least containing at least any one of a metal alkoxide, a metal chloride, a hydrolysate of the metal alkoxide and a polycondensate of the hydrolysate, and water, thereby obtaining a laminated body; subsequently heating the laminated body at a temperature lower than the sintering temperature of the ceramic powder; and removing the ceramic particle in a region to which the precursor composition has not been applied.