A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R.sup.1, R.sup.2, and R.sup.3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X.sup.1, X.sup.2, and X.sup.3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R.sup.4 represents a hydrocarbon group having 1 to 20 carbon atoms and R.sup.5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R.sup.4 and R.sup.5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R.sup.4 and R.sup.5 bond; n is 0 or 1; A.sup.− represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R.sup.7)CO—.

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The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having excellent LWR performance can be obtained, a resist film, a pattern forming method, a method for manufacturing an electronic device, a compound, and a method for producing the compound. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition including a resin having a repeating unit having a group having a polarity that increases through decomposition by the action of an acid, in which the actinic ray-sensitive or radiation-sensitive resin composition further includes, in addition to the resin, a compound having at least one cation represented by General Formula (1), or the resin further has, in addition to the repeating unit, a repeating unit having the cation represented by General Formula (1).

(R.sup.d1).sub.m—[X.sup.d1].sup.+-(L.sup.d1-Ar.sup.d1—(S—X.sup.d2).sub.p).sub.n   (1)

A salt represented by formula (I), a resin comprising a structural unit derived from the salt represented by formula (I), a resit composition comprising the salt represented by formula (I) or a resin comprising a structural unit derived from the salt represented by formula (I).

##STR00001##

A salt represented by formula (I), a resin comprising a structural unit derived from the salt represented by formula (I), a resit composition comprising the salt represented by formula (I) or a resin comprising a structural unit derived from the salt represented by formula (I).

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The present specification provides a compound, a photoresist composition comprising the same, a photoresist pattern comprising the same, and a method for preparing a photoresist pattern.

The present specification provides a compound, a photoresist composition comprising the same, a photoresist pattern comprising the same, and a method for preparing a photoresist pattern.

A system for preparing high-purity taurine and salt. The system can be used in an ethylene oxide process for producing taurine. The system includes an addition reaction device, an ammonolysis reaction device, an evaporation device, and a taurine salt concentrated solution collection device. The ammonolysis reaction device is provided with a metal salt inlet, the taurine salt concentrated solution collection device is connected with an ion exchange system for ion exchange, the ion exchange system is provided with an acid inlet, an adsorption solution outlet and an eluate outlet, the adsorption solution outlet of the ion exchange system is connected with a taurine extraction device, the eluate outlet of the ion exchange system is connected with a salt extraction device, and the ion exchange system is provided with a purified water inlet, an adsorption unit cleaning water outlet and an elution unit cleaning water outlet.

A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.

A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.

A resist composition including a compound represented by formula (b1) in which R.sup.b1 represents an aryl group which may have a substituent; R.sup.b2 and R.sup.b3 each independently represents an aryl group which may have a substituent or an alkyl group which may have a substituent; provided that at least one of the aryl group represented by R.sup.b1 and the aryl group or the alkyl group represented by R.sup.b2 or R.sup.b3 has a substituent containing a halogen atom, and at least one of the aryl group represented by R.sup.b1 and the aryl group or the alkyl group represented by R.sup.b2 or R.sup.b3 has a substituent containing a sulfonyl group; and X.sup.− represents a counteranion ##STR00001##