C08F12/20

Conductive polymer composite and substrate

The present invention provides a conductive polymer composite including: (A) a -conjugated polymer, and (B) a dopant polymer which contains a repeating unit a shown by the following general formula (1) and has a weight-average molecular weight in the range of 1,000 to 500,000. There can be provided a conductive polymer composite that has excellent filterability and film-formability by spin coating, and also can form a conductive film having high transparency and flatness when the film is formed therefrom. ##STR00001##

Conductive polymer composite and substrate

The present invention provides a conductive polymer composite including: (A) a -conjugated polymer, and (B) a dopant polymer which contains a repeating unit a shown by the following general formula (1) and has a weight-average molecular weight in the range of 1,000 to 500,000. There can be provided a conductive polymer composite that has excellent filterability and film-formability by spin coating, and also can form a conductive film having high transparency and flatness when the film is formed therefrom. ##STR00001##

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.

Block copolymer

The present application provides the block copolymers and their application. The block copolymer has an excellent self assembling property and phase separation and various required functions can be freely applied thereto as necessary.

Block copolymer

The present application provides the block copolymers and their application. The block copolymer has an excellent self assembling property and phase separation and various required functions can be freely applied thereto as necessary.

POLYMER, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN
20190056664 · 2019-02-21 · ·

A polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, wherein at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom. In the formulae, R.sup.1 is a chlorine atom, a fluorine atom, or a fluorine atom-substituted alkyl group, R.sup.2 is an unsubstituted alkyl group or a fluorine atom-substituted alkyl group, R.sup.3 to R.sup.6, R.sup.8, and R.sup.9 are each a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R.sup.7 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of at least 0 and not more than 5, and p+q=5.

##STR00001##

Polymer, positive resist composition, and pattern forming process

A polymer comprising recurring units derived from vinylanthraquinone, recurring units derived from acid labile group-substituted hydroxystyrene, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a positive resist composition having a high resolution and minimal LER.

Polymer, positive resist composition, and pattern forming process

A polymer comprising recurring units derived from vinylanthraquinone, recurring units derived from acid labile group-substituted hydroxystyrene, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a positive resist composition having a high resolution and minimal LER.

RESIST COMPOSITION AND PATTERNING PROCESS

A resist composition comprising a polymer comprising recurring units having an optionally substituted brominated phenol has advantages including high sensitivity, high resolution and reduced acid diffusion and forms a pattern of good profile with improved CDU.