Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity. Provided is a block copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2: ##STR00001##

The present invention provides a conductive material including: (A) a ?-conjugated polymer, (B) a dopant polymer which contains one or more repeating units selected from a1 to a4 respectively shown by the following general formula (1) and has a weight-average molecular weight in the range of 1,000 to 500,000, and (C) one or more salts selected from the group consisting of a monovalent copper salt of carboxylic acid, a monovalent copper salt of ?-diketone, and a monovalent copper salt of ?-ketoester. There can be provided a conductive material that has excellent film-formability and also can form a conductive film having high transparency and conductivity, superior flexibility and flatness when the film is formed from the material. ##STR00001##

The present invention provides a conductive material including: (A) a ?-conjugated polymer, (B) a dopant polymer which contains one or more repeating units selected from a1 to a4 respectively shown by the following general formula (1) and has a weight-average molecular weight in the range of 1,000 to 500,000, and (C) one or more salts selected from the group consisting of a monovalent copper salt of carboxylic acid, a monovalent copper salt of ?-diketone, and a monovalent copper salt of ?-ketoester. There can be provided a conductive material that has excellent film-formability and also can form a conductive film having high transparency and conductivity, superior flexibility and flatness when the film is formed from the material. ##STR00001##

Polymers for use as protective layers and other components in electrochemical cells are provided. In some embodiments, the electrochemical cell is a lithium-based electrochemical cell.

Polymers for use as protective layers and other components in electrochemical cells are provided. In some embodiments, the electrochemical cell is a lithium-based electrochemical cell.

Polymers comprising at least one unit of formula (1) wherein n is 0 or 1, m and p are independently from each other 0, 1, 2, 3, 4, 5 or 6, provided that the sum of n, m and p is at least 2, and n and p are not 0 at the same time, Ar.sup.1 and Ar.sup.2 are independently from each other C.sub.6-14-arylene or C.sub.6-14-aryl, which may be substituted with 1 to 4 substituents independently selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl and 5 to 14 membered heteroaryl, and X.sup.1, X.sup.2 and X.sup.3 are independently from each other and at each occurrence O or S, compositions comprising these polymers, and electronic devices comprising a layer formed from the compositions. Preferably, the electronic device is an organic field effect transistor and the layer is the dielectric layer. ##STR00001##

The invention relates to a polymer obtainable by radical co-polymerization of a first monomer of general formula (I) or (II) or a mixture thereof: wherein A, A, B, B X, Y, Y and n are as defined herein; with a second, cross-linking monomer and optionally with one or more further co-monomers; wherein the molar ratio of the first monomer to other monomers is less than or equal to 1:5. The polymers selectively bind to phosphate ester compounds and can be used as a solid phase in a method for isolating compounds comprising a phosphate ester group from a mixture comprising one or more phosphate monoesters and/or phosphate diesters and/or other compounds such as lipids. ##STR00001##

Provided is a diblock copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2:

##STR00001##

Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity. Provided is a block copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2:

##STR00001##

A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a first polymer comprising recurring units capable of forming carboxyl, hydroxyl or lactone ring and a second polymer comprising recurring units capable of forming amino and fluorinated recurring units in an ester and/or ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.