An object of the present invention is to provide a pattern forming method using a non-chemically amplified resist composition, which has excellent washing properties in a washing step with an EBR liquid and is less likely to cause a film loss in a non-exposed portion during development using an organic solvent-based developer.

Another object of the present invention to provide a method for manufacturing an electronic device using the pattern forming method.

The pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a washing step of washing an outer peripheral portion of the substrate with a washing solution including an organic solvent while rotating the substrate on which the resist film is formed, an exposing step of exposing the resist film, a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including an ion pair which is decomposed by an irradiation with an actinic ray or a radiation, and a solvent, and all of expressions (1) to (4) are satisfied.

An object of the present invention is to provide a pattern forming method using a non-chemically amplified resist composition, which has excellent washing properties in a washing step with an EBR liquid and is less likely to cause a film loss in a non-exposed portion during development using an organic solvent-based developer.

Another object of the present invention to provide a method for manufacturing an electronic device using the pattern forming method.

The pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a washing step of washing an outer peripheral portion of the substrate with a washing solution including an organic solvent while rotating the substrate on which the resist film is formed, an exposing step of exposing the resist film, a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including an ion pair which is decomposed by an irradiation with an actinic ray or a radiation, and a solvent, and all of expressions (1) to (4) are satisfied.

A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group, Va.sup.1 is a divalent hydrocarbon group, n.sub.a1 represents an integer of 0 to 2, Ya.sup.0 is a carbon atom, Xa.sup.0 is a group forming a monocyclic aliphatic hydrocarbon group together with Ya.sup.0, and Ra.sup.00 is an aromatic hydrocarbon group or a specific unsaturated hydrocarbon group. In general formula (b1), R.sup.b1 represents a cyclic hydrocarbon group, Y.sup.b1 represents a divalent linking group containing an ester bond, V.sup.b1 represents an alkylene group, a fluorinated alkylene group, or a single bond, and M.sup.m+ is an m-valent organic cation.

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A resist composition which generates an acid upon exposure and changes a solubility in a developing solution under an action of the acid, the resist composition containing a base material component whose solubility in the developing solution changes under the action of an acid and an acid generator represented by general formula (b1). In general formula (b-1), R.sup.b1 represents an aromatic hydrocarbon group having at least one alkyl group having 3 or more carbon atoms as a substituent, Y.sup.b1 represents a divalent linking group containing an ester bond (—C(═O)—O— or —O—C(═O)—), V.sup.b1 represents an alkylene group, a fluorinated alkylene group, or a single bond, m is an integer of 1 or more, and M.sup.m+ represents an m-valent organic cation.

R.sup.b1—Y.sup.b1—V.sup.b1—CF.sub.2—SO.sub.3.sup.−(M.sup.m+).sub.1/m  (b1)

A polymer comprising recurring units derived from vinylanthraquinone, recurring units containing a benzene ring having a hydroxyl-bearing tertiary alkyl group bonded thereto, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a negative resist composition having a high resolution and minimal LER.

Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a resin (B) having a group that decomposes by the action of an alkali developer to increase the solubility in the alkali developer and having at least one of a fluorine atom or a silicon atom, and a resin (C) having a phenolic hydroxyl group, different from the resin (B), an actinic ray-sensitive or radiation-sensitive film and a mask blank, each formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.

A polymer comprising recurring units derived from vinylanthraquinone, recurring units derived from acid labile group-substituted hydroxystyrene, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a positive resist composition having a high resolution and minimal LER.