A photoresist composition includes a photosensitive polymer including a polymer chain and at least one first functional group coupled to the polymer chain, and a photoacid generator. The first functional group has a structure represented by the following Chemical Formula 1, ##STR00001##
where R.sub.1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R.sub.2 is one of H, F, Cl, Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20.

Disclosed are photosensitive resin compositions capable of forming positive resin films with excellent heat shape retention. The photosensitive resin compositions comprises a polymer having a monomer unit represented by the following general formula (I) and a polyamideimide:

##STR00001##

where R.sup.1 is a single chemical bond or a divalent C1-C6 hydrocarbon group which may have a substituent, and R.sup.2 is a hydrogen or a monovalent C1-C6 hydrocarbon group which may have a substituent.

A polymer (P) to generate an acid by light exposure and to change in solubility in a developer with an action of the acid, the polymer containing: a repeating unit represented by the following formula (A-1); a repeating unit represented by any one or more selected from the following formulae (B-1), (B-2), (B-3), and (B-4) to generate an acid by light exposure; and a repeating unit represented by the following formula (a-1) or (a-2) other than the repeating unit represented by the formula (A-1). This provides a polymer to be contained in a resist composition that is excellent in etching resistance and that makes it possible to form a pattern with high sensitivity, high resolution, high contrast, and small LWR and CDU when using, in particular, an electron beam or an extreme ultraviolet ray (EUV) having a wavelength of 13.5 nm; a resist composition containing the polymer; and a patterning process using the resist composition.

##STR00001##

A photoresist composition includes a photosensitive polymer including a polymer chain and at least one first functional group coupled to the polymer chain, and a photoacid generator. The first functional group has a structure represented by the following Chemical Formula 1,

##STR00001##

where R.sub.1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R.sub.2 is one of H, F, Cl, Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20.

According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a hydrophobic resin (B), and a resin (C) having an aromatic ring, as well as a film, a mask blank, a pattern forming method, and a method for manufacturing an electronic device, each using the composition, are provided.

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin (A) containing a repeating unit represented by General Formula (4) and a crosslinking agent (C) containing a polar group, in which the crosslinking agent (C) is a compound represented by General Formula (1) or a compound in which two to five structures represented by General Formula (1) are connected via a linking group or a single bond represented by L.sub.1 in General Formula (3). ##STR00001##

A resist composition includes a novolak resin in which a hydroxy group is substituted with a group represented by formula (3), an acid generator, a quencher, and a solvent: ##STR00001##
wherein, in formula (3), R.sup.a10 represents a hydrocarbon group having 1 to 20 carbon atoms (e.g., a chain hydrocarbon group such as an alkyl group, an alkenyl group and an alkynyl group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, groups formed by combining these groups, etc.) and * represents a bond.

A resist composition includes a novolak resin in which a hydroxy group is substituted with a group represented by formula (3), an acid generator, a quencher, and a solvent: ##STR00001##
wherein, in formula (3), R.sup.a10 represents a hydrocarbon group having 1 to 20 carbon atoms (e.g., a chain hydrocarbon group such as an alkyl group, an alkenyl group and an alkynyl group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, groups formed by combining these groups, etc.) and * represents a bond.

The invention relates to a novel synthesis method for forming superacid functional molecules that include monomers, as well as new polymers and copolymers formed from the monomers, and uses for these superacid molecules, polymers, and copolymers. The superacid molecules have an alpha, alpha-difluorosulfonic acid functionality that can be obtained by a reaction between various Grignard reagents and an alkyl(2-fluorosulfonyl)-1,1-difluoroacetate, such as methyl (2-fluorosulfonyl-1,1-difluoroacetate. The molecules, polymers and copolymers would be expected to have enhanced ion conductivity, and would be useful in a variety of applications, including as ion-conductive materials, surfactants, and ion exchange resins.

A film layer comprising a high-chi () block copolymer for self-assembly and a hexafluoroalcohol-containing surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a substituted or unsubstituted styrene-based block). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0 Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.