A method for producing a resin having a repeating unit that is decomposed by irradiation of an actinic ray or a radiation to generate acid, the method including polymerizing a specific compound represented by General formula (P-1) and a copolymerizable monomer compound, a method for producing an actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a resin corresponding to a reaction intermediate of the resin.

A method for producing a resin having a repeating unit that is decomposed by irradiation of an actinic ray or a radiation to generate acid, the method including polymerizing a specific compound represented by General formula (P-1) and a copolymerizable monomer compound, a method for producing an actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a resin corresponding to a reaction intermediate of the resin.

A resist composition comprising a base polymer and a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with an iodized phenyl-containing group and a nitro group is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A resist composition comprising a base polymer and a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with an iodized phenyl-containing group and a nitro group is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

An infrared cut-off filter, including a cyanine dye and a copolymer. The cyanine dye includes tris(pentafluoroethyl) trifluorophosphate and a cation having a polymethine and a nitrogen-containing heterocycle at each end of the polymethine. The copolymer includes a first repeating unit from a first monomer and a second repeating unit from a second monomer different from the first monomer. The first monomer includes a phenolic hydroxyl group.

An infrared cut-off filter, including a cyanine dye and a copolymer. The cyanine dye includes tris(pentafluoroethyl) trifluorophosphate and a cation having a polymethine and a nitrogen-containing heterocycle at each end of the polymethine. The copolymer includes a first repeating unit from a first monomer and a second repeating unit from a second monomer different from the first monomer. The first monomer includes a phenolic hydroxyl group.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodized or brominated aromatic ring exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodized or brominated aromatic ring exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): ##STR00001##
wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R.sub.1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R.sub.2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of N-carbonylsulfonamide having an iodized aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.