Patent classifications
C08F220/365
Radiation-sensitive resin composition, resist pattern-forming method, compound, and method of controlling acid diffusion
The radiation-sensitive resin composition contains: a polymer having a structural unit that includes an acid-labile group; and a compound represented by formula (1). In the formula (1), Ar.sup.1 represents a group obtained by removing (m+n+2) hydrogen atoms from an aromatic ring of an arene having 6 to 30 carbon atoms; —OH and —COO— are bonded at ortho positions to each other on a same benzene ring on Ar.sup.1; and R.sup.G represents a group represented by formula (V-1), a group represented by formula (V-2), a group including a lactone structure, a group including a cyclic carbonate structure, a group including a sultone structure, a group including a ketonic carbonyl group, a group including a thiocarbonate group, or a group including a group represented by formula (V-3), or the like. ##STR00001##
Preparation of conjugated aromatic/heteroaromatic oligomer-containing dielectric polymers and their applications
A π-conjugated aromatic/heteroaromatic oligomer-containing vinyl monomer is generally provided, which can include a polymerizable group, a linker group, and a π-conjugated aromatic/heteroaromatic side chain. The π-conjugated aromatic/heteroaromatic side chain includes a first cyclopentadiene ring covalently attached to the linder group, a set of second cyclopentadiene rings covalently attached to the first cyclopentadiene ring, and a third cyclopentadiene ring positioned at a terminal end of the π-conjugated aromatic/heteroaromatic side chain such that the set of second cyclopentadiene rings is positioned between the first cyclopentadiene ring and the third cyclopentadiene ring. Methods are also provided for forming a polymer via polymerizing the π-conjugated aromatic/heteroaromatic oligomer-containing vinyl monomer, and for grafting a π-conjugated aromatic/heteroaromatic oligomer-containing polymer onto a surface of a nanomaterial.
Treatment liquid and pattern forming method
An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C.
RESIST COMPOSITION AND PATTERN FORMING PROCESS
A resist composition is provided comprising a polymer comprising recurring units (a) having a succinimide structure and recurring units (b) containing a group capable of polarity switch with the aid of acid. The resist composition suppresses acid diffusion, exhibits a high resolution, and forms a pattern of satisfactory profile with low edge roughness.
Thiosulfate polymer compositions and articles
A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles, or used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material. Such thiosulfate polymer compositions can also be used to sequester metals in nanoparticulate form, and as a way for shaping human hair in hairdressing operations.
Thiosulfate polymer compositions and articles
A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles, or used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material. Such thiosulfate polymer compositions can also be used to sequester metals in nanoparticulate form, and as a way for shaping human hair in hairdressing operations.
FUNCTIONALIZED ZWITTERIONIC AND MIXED CHARGE POLYMERS, RELATED HYDROGELS, AND METHODS FOR THEIR USE
Functionalized zwitterionic and mixed charge polymers and copolymers, methods for making the polymers and copolymers, hydrogels prepared from the functionalized zwitterionic and mixed charge polymers and copolymers, methods for making and using the hydrogels, and zwitterionic and mixed charge polymers and copolymers for administration for therapeutic agents.
PHOTOSENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
A photosensitive composition for EUV light includes a resin X of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, and a photoacid generator; or a resin Y which includes a repeating unit having a photoacid generating group and of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, in which the photosensitive composition for EUV light satisfies both Requirement 1 and Requirement 2.
PHOTOSENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
A photosensitive composition for EUV light includes a resin X of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, and a photoacid generator; or a resin Y which includes a repeating unit having a photoacid generating group and of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, in which the photosensitive composition for EUV light satisfies both Requirement 1 and Requirement 2.
Copolymer having thickening and suspension properties
(EN) The invention relates to the field involved in the production of aqueous compositions comprising rheology modifying agents, in particular the production of aqueous detergent or cosmetic compositions having improved, thickening and clarity properties, as well as good suspension properties. In particular, the invention relates to a rheology modifying agent which is a copolymer obtained by means of polymerisation of at least one crosslinking monomer with at least one anionic monomer comprising at least one polymerisable ethylenic unsaturation and at least one hydrophobic non-ionic monomer comprising at least one polymerisable ethylenic unsaturation.