An example of a resin composition includes an epoxy resin matrix, a free radical photoinitiator selected from the group consisting of 2-ethyl-9,10-dimethoxyanthracene, 2,2-dimethoxy-2-phenylacetophenone, 2-ethoxy-2-phenylacetophenone, and a phosphine oxide, and a photoacid generator. When cured, the resin composition has low or no autofluorescence when exposed to blue excitation wavelengths ranging from about 380 nm to about 480 nm or green excitation wavelengths ranging from about 510 nm to about 560 nm.

A cured product of a resin composition according to the present invention includes at least silsesquioxane. When the average thermal expansion coefficient of the cured product at 30 to 200 C. is expressed as 1 [K.sup.1], at least one of requirements 1/210 and (12).sup.210.sup.80.4 is satisfied, where a reference value 2 is 35010.sup.6 [K.sup.1] or less. In the cured product, an absorbance derived from a siloxane bond, an absorbance derived from a hydrocarbon group, and an absorbance derived from a hydroxy group are respectively expressed as Ia, Ib, and Ic, the absorbances being determined by attenuated total reflection using a Fourier transform infrared spectrophotometer. In this case, requirements 0.09Ia/Ib3.0 and 0.04Ic/Ib1.0 are satisfied.

An object of the present invention is to provide a technique suitable for achieving low wiring resistance and reducing a variation in the resistance value between semiconductor elements to be multilayered in a method of manufacturing a semiconductor device in which the semiconductor elements are multilayered through laminating semiconductor wafers via an adhesive layer. The method of the present invention includes first to third processes. In the first process, a wafer laminate Y is prepared, the wafer laminate Y having a laminated structure including a wafer 3, wafers 1T with a thickness from 1 to 20 um, and an adhesive layer 4 with a thickness from 0.5 to 4.5 m interposed between a main surface 3a of the wafer 3 and a back surface 1b of the wafer 1T. In the second process, holes extending from the main surface 1a of the wafer 1T and reaching a wiring pattern of the wafer 3 are formed by a predetermined etching treatment. In the third process, the holes are filled with a conductive material to form through electrodes. The adhesive layer 4 has an etching rate of 1 to 2 m/min in dry etching performed using an etching gas containing CF.sub.4, O.sub.2, and Ar at a volume ratio of 100:400:200 under predetermined conditions.

Provided is an epoxy resin composition having excellent low dielectric characteristics. Specifically, provided is an epoxy resin composition comprising a polyphenylene ether and an epoxy resin having a specific structure.

Provided is an epoxy resin composition maintaining excellent adhesion and having low dielectric tangent. Specifically, provided is an epoxy resin composition comprising a specific epoxy resin and a phenol-based curing agent.

Provided is an epoxy resin composition having excellent adhesion and low dielectric characteristics. Specifically, provided is an epoxy resin composition comprising an acid-modified polyolefin resin and an epoxy resin having a specific structure.

Provided is a photosensitive resin composition comprising: (A) a silicone resin having an epoxy group and/or a phenolic hydroxyl group; (B) a photoacid generator represented by formula (B); and (C) a carboxylic acid quaternary ammonium compound.

##STR00001##

A resin composition of the present invention contains: an epoxy resin (A); a hardener (B); and an ion exchanger (C). At least one of the epoxy resin (A) and the hardener (B) contains a modified silicone (S), and the epoxy resin (A) is at least one type selected from the group consisting of a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a phenol novolac type epoxy resin, and an epoxy-modified silicone.

A photosensitive resin composition comprising a dual end alicyclic epoxy-modified silicone resin having formula (A1) and a photoacid generator is provided. In formula (A1), R.sup.1 to R.sup.4 are a C.sub.1-C.sub.20 monovalent hydrocarbon group and n is an integer of 1-600. The composition enables pattern formation using radiation of widely varying wavelength, and the patterned film has high transparency, light resistance, and heat resistance.

##STR00001##

An example of a resin composition includes an epoxy resin matrix, a free radical photoinitiator selected from the group consisting of 2-ethyl-9,10-dimethoxyanthracene, 2,2-dimethoxy-2-phenylacetophenone, 2-ethoxy-2-phenylacetophenone, and a phosphine oxide, and a photoacid generator. When cured, the resin composition has low or no autofluorescence when exposed to blue excitation wavelengths ranging from about 380 nm to about 480 nm or green excitation wavelengths ranging from about 510 nm to about 560 nm.