Power systems, sputtering systems, and sputtering methods are disclosed. A sputtering system comprises at least one electrode pair comprising a first electrode and a second electrode, and each electrode of the dual electrode pair is configured to support target material. The sputtering system also includes a generator configured to provide an alternating voltage waveform and at least one balun comprising a balanced side coupled to the first electrode and the second electrode and an unbalanced side coupled to the generator. The sputtering system also includes means for inductively coupling power, applied from the generator, from the unbalanced side to the balanced side.

A plasma film forming apparatus 1 includes: a vacuum chamber 2 in which a film forming process is performed to a substrate 4; a substrate holder 3 provided so as to be rotatable along a film forming surface 4a of the substrate 4; a rotating shaft 5 connected to the substrate holder 3; and a plasma generation unit 10 configured to generate a plasma 6 and provided such that an irradiation angle of the plasma 6 with respect to the rotating shaft 5 forms an acute angle. The apparatus further includes: a first driving unit 7 configured to move the substrate holder 3 in a vertical direction 11 parallel to the rotating shaft 5; a second driving unit 8 configured to move the substrate holder 3 in a horizontal direction 12 orthogonal to the rotating shaft 5; and a third driving unit 9 configured to rotate the rotating shaft 5, and the substrate holder 3 is moved independently in the vertical direction 11 and the horizontal direction 12.

Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

A device for producing an amorphous carbon layer by electron cyclotron resonance plasma, the device including a plasma chamber; a gas supply; a magnetic mirror; a waveguide extending along a reference axis; a system for injecting microwave power; a magnetic field generator for generating a magnetic field in the plasma chamber, the magnetic field generator being configured to create a beam of magnetic field lines along which plasma is diffused; a target made from carbon; a substrate holder, wherein the target is arranged at a distance from the reference axis of between R.sub.target/2 and R.sub.target, and wherein the device further includes a screen arranged between the waveguide and the substrate holder.

Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

The present disclosure relates to the field of vapor deposition technologies, and discloses a vapor deposition method. The vapor deposition method includes: applying an exciting acoustic wave to the target, such that particles in a predetermined location of the target break away from the target and adhere to a predetermined region of the substrate when an energy of the particles is higher than an energy required for the particles to break away from the target. By using the vapor deposition method, losses of vapor deposition materials may be avoided, utilization of the vapor deposition materials may be increased, and thus costs may be reduced.

Embodiments of the present disclosure generally relate to a method for forming an opening using a mask. In one embodiment, a method includes forming a mask on a feature layer. The method includes forming a first opening in the mask to expose a portion of the feature layer. The method further includes forming a carbon layer on the mask and the exposed portion of the feature layer. The method also includes removing portions of the carbon layer and a portion of the exposed portion of the feature layer in order to form a second opening in the feature layer.

A method hardens an anti-reflection treatment deposited on a transparent substrate that includes a top surface and a bottom surface which extends remotely from the top surface. The anti-reflection treatment includes depositing at least one anti-reflection layer of at least one material on at least one of the top and bottom surfaces of the transparent substrate, bombarding the at least one top or bottom surface on which the at least one anti-reflection layer has been deposited using a singly-charged and/or multi-charged ion beam produced by a singly-charged and/or multi-charged ECR electron cyclotron resonance ion source. The method produces a transparent substrate having undergone an anti-reflection treatment such that at least one of the top and bottom surfaces of the transparent substrate is coated with at least one anti-reflection layer of at least one material, whereby ions are implanted in the at least one anti-reflection layer.

Plasma spray systems comprise multiple zones wherein the energy required for different processes within the systems can be controlled independently. In some embodiments, a plasma spray system comprises a first zone wherein ionic species are generated from the target material using a first energy input, and the ionic species either combine to form a plurality of particles in the first zone, or form coatings on a plurality of input particles input into the first zone. The plasma spray system can further comprise a second zone, comprising a chamber coupled to a microwave energy source, which ionizes the plurality of particles to form a plurality of ionized particles and form a plasma jet. The plasma spray system can further comprise a third zone, comprising an electric field to accelerate the plurality of ionized particles and form a plasma spray.

The invention relates to a method for depositing a chromium-based material from a target onto a metal substrate, by continuous magnetron sputtering, using a plasma generated in a gas.

According to the invention: the ratio between the flow of gaseous ions directed toward the substrate and the flow of neutral chromium atoms directed toward the substrate is adjusted to between 0.5 and 1.7; and a bias voltage of between ?50V and ?100V is applied to the substrates.