Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

A method comprises: forming a first layer stack on a first substrate by means of a multiplicity of coating processes, each coating process of which forms at least one layer of the first layer stack; detecting an optical spectrum of the first layer stack; determining correction information for at least one coating process of the multiplicity of coating processes using a model, wherein the model provides a right-unique mapping function between a deviation of the spectrum from a desired spectrum and the correction information; and changing at least one control parameter for controlling the at least one coating process of the multiplicity of coating processes using the correction information; and forming a second layer stack on the first or a second substrate by means of the multiplicity of coating processes using the changed control parameter, each coating process of which forms at least one layer of the second layer stack.

An organic light-emitting diode (OLED) deposition system has a workpiece transport system configured to position a workpiece within the OLED deposition system under vacuum conditions, a deposition chamber configured to deposit a first layer of organic material onto the workpiece, a metrology system having one or more sensors measure of the workpiece after deposition in the deposition chamber, and a control system to control a deposition of the layer of organic material onto the workpiece. The metrology system includes a digital holographic microscope positioned to receive light from the workpiece and generate a thickness profile measurement of a layer on the workpiece. The control system is configured to adjust processing of a subsequent workpiece at the deposition chamber or adjust processing of the workpiece at a subsequent deposition chamber based on the thickness profile.

An apparatus for laser deposition with a reactive gas includes a source, a target, and a substrate. The source emits a plasma jet of the reactive gas. The target generates a plasma plume of a deposition material when a laser beam ablates the target. The substrate collects a film resulting from a chemical reaction between the deposition material from the plasma plume and the reactive gas from the plasma jet. Correspondingly, a method for laser deposition with a reactive gas includes steps of emitting a plasma jet of the reactive gas, ablating a target with a laser beam, and collecting a film on a substrate. The plasma jet emits from an orifice of a source. Ablating the target generates a plasma plume of a deposition material. The film results from a chemical reaction between the deposition material from the plasma plume and the reactive gas from the plasma jet.

The invention relates to a device and a method for producing layers whose layer thickness distribution can be adjusted in coating systems with horizontally rotating substrate. A very homogeneous or a specific non-homogeneous distribution can be adjusted. The particle loading is also significantly reduced. The service life is significantly higher compared to other methods. Forming of parasitic coatings is reduced.

A method of fabrication in a vacuum chamber. The method comprises: deploying the wafer within the vacuum chamber; applying a mask in a first position over the wafer in the vacuum chamber; following this, performing a first fabrication step comprising projecting material onto the wafer through the mask while in vacuum in the vacuum chamber; then operating a mask-handling mechanism deployed within the vacuum chamber in order to reposition the mask to a second position while remaining in vacuum in the vacuum chamber, wherein the repositioning comprises receiving readings from one or more sensors sensing a current position of the mask and based thereon aligning the current position of the mask to the second position; and following this repositioning, performing a second fabrication step comprising projecting material onto the wafer through patterned openings in the repositioned mask while still maintaining the vacuum in the vacuum chamber.

A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

A processing system for processing a flexible substrate is described. The processing system includes a vacuum chamber having a wall with an opening for the flexible substrate, a substrate support for supporting the flexible substrate during transportation of the flexible substrate through the opening, and a measurement assembly for measuring at least one of a property of the flexible substrate and a property of one or more coatings on the flexible substrate. The measurement assembly and the substrate support are attached to the wall.

A film thickness control system and a film thickness control method for an evaporation device, an evaporation device and an evaporation method are disclosed. The film thickness control system includes: a driving device, a film thickness meter and a computer; the film thickness meter is mounted on the driving device, connected with the computer, and configured to acquire a coordinate of a measured position of a substrate to be measured from the computer and send an actual film thickness of the measured position to the computer; and the computer is configured, when the actual film thickness does not exceed an error range of a preset film thickness, to calculate a new compensation value according to the actual film thickness, the preset film thickness and a current compensation value, and send the new compensation value to the evaporation device as reference for compensating evaporation.

The invention relates to a system for controlling evaporator boats, having a fixture (16) for receiving a plurality of evaporator boats (14), an energy source (18) for providing energy for heating each of the evaporator boats (14), a supply wire drive (24) for each of the evaporator boats (14), at least one camera (32) adapted for capturing an image of at least one of a plurality of evaporator boats (14) mounted in the fixture (16), and a control (26), the control (26) having an image analyzation module (36) and being adapted for providing a control signal for the supply wire drive (24) and a control signal for the energy source (18), the control signals depending at least in part from an output of the image analyzation module (36). The invention further relates to a PVD machine and to a method of operating the machine.