A method of processing a substrate that includes: loading the substrate in a processing system, the substrate including a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level; etching the metal to form a recessed metal surface below the dielectric material surface; selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process; and depositing a dielectric film including a second dielectric material on the dielectric material surface.

An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors. Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Described herein is a technique capable of improving the uniformity of the film formation among the substrates. According to the technique described herein, there is provided a configuration including: a reaction tube having a process chamber where a plurality of substrates are processed; a buffer chamber protruding outward from the reaction tube and configured to supply a process gas to the process chamber, the buffer chamber including: a first nozzle chamber where a first nozzle is provided; and a second nozzle chamber where a second nozzle is provided; an opening portion provided at a lower end of an inner wall of the reaction tube facing the buffer chamber; and a shielding portion provided at a communicating portion of the opening portion between the second nozzle chamber and the process chamber.

An apparatus for processing stacks is provided. A first gas source is provided. A first gas manifold is connected to the first gas source. A first processing station has a first gas outlet, wherein the first gas outlet is connected to the first gas manifold. A first variable conductance valve is between the first gas source and the first gas outlet along the first gas manifold.

An oxide film forming device includes: a chamber in which a target workpiece is removably placed; a gas supply unit arranged at a position opposed to a film formation surface of the target workpiece placed in the chamber; and a gas discharge unit arranged to discharge a gas inside the chamber by suction to the outside of the chamber. The gas supply unit has a raw material gas supply nozzle, an ozone gas supply nozzle and an unsaturated hydrocarbon gas supply nozzle with supply ports thereof opposed to the film formation surface of the target workpiece at a predetermined distance away from the film formation surface. A raw material gas, an ozone gas and an unsaturated hydrocarbon gas supplied from the respective supply nozzles are mixed in a space between the supply ports and the film formation surface.

A chemical vapor deposition process for depositing a coating comprising silicon oxide and titanium oxide is provided. A coating formed by the chemical vapor deposition process is also provided.

Provided is a hard coat laminate having excellent abrasion resistance and heat resistance. The hard coat laminate includes: a substrate; and a base layer disposed on one main surface side of the substrate, in which the base layer contains inorganic nanoparticles, the base layer contains oxygen atoms, carbon atoms, and silicon atoms, the base layer has, on a surface side opposite to the substrate, a first region in which a compositional ratio of carbon atoms to all elements excluding hydrogen decreases as a distance from the substrate increases, in a region other than the first region of the base layer, a compositional ratio of carbon atoms to all elements excluding hydrogen is 5 atom % to 40 atom %, and a compositional ratio of carbon atoms on a surface of the first region is 1 atom % or less.

Described herein are nanostraw well insert apparatuses (e.g., devices and systems) that include nanotubes extending through and out of a membrane so that a material can pass through the membrane from a fluid reservoir depot and into a cell grown onto the nanotubes when electrical energy (e.g., electroporation energy) is applied. In particular, the device, systems and methods described herein may be adapted for cell growth viability and transfection efficiency (e.g., >70%). These apparatuses may be readily integratable into cell culturing processes for improved transfection efficiency, intracellular transport, and cell viability.

A film-forming method includes: forming a first film by performing an operation of forming a unit film a plurality of times, the operation including sub-step of supplying a first raw material gas containing a first element to a substrate and causing the first raw material gas to be adsorbed thereon, and sub-step of supplying a first reaction gas to the substrate; and forming a second film on the substrate by performing an operation of forming a unit film at least once, the operation including sub-step of supplying a second raw material gas containing a second element to the substrate and causing the second raw material gas to be adsorbed thereon, and sub-step of supplying a second reaction gas to the substrate, wherein a mixed film is formed by performing the forming the first film and the forming the second film, respectively once, or a plurality of times.