A selective liquid sliding surface includes: a base layer; multiple pillars protruding from the base layer; and a head protruding from an upper surface of each of the multiple pillars and having a larger cross-sectional diameter than the pillar, wherein the head includes a first head protruding from the pillar and a second head protruding from a periphery of the first head, and the base layer, the pillar, and the head are formed of the same material.

According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.

Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors.

Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

A method for forming a silicon oxide film on a step formed on a substrate includes: (a) designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film to be selectively deposited or removed or reformed with reference to a non-target portion of the initial silicon nitride film resulting in the final silicon oxide film; and (b) forming the initial silicon nitride film and the final silicon oxide film on the surfaces of the step according to the topology designed in process (a), wherein the initial silicon nitride film is deposited by ALD using a silicon-containing precursor containing halogen, and the initial silicon nitride film is converted to the final silicon oxide film by oxidizing the initial silicon nitride film without further depositing a film wherein a Si—N bond in the initial silicon nitride film is converted to a Si—O bond.

Disclosed is a LiDAR window integrated optical filter that includes a window of a polymer material for absorbing a visible light band and transmitting a near-infrared band; and an upper reflective layer and a lower reflective layer formed on the upper surface and the lower surface of the window. The upper reflective layer and the lower reflective layer may be formed in a thin film including titanium dioxide (TiO.sub.2) and silicon dioxide (SiO.sub.2).

A coated optical component includes an optical component and a conformal coating. The optical component is crystalline calcium fluoride and the conformal coating is an atomic layer deposition (ALD) coating in contact with a surface of the optical component. The ALD coating includes a metal fluoride ALD coating having a metal different from calcium. The ALD coating can include other metal oxide or metalloid oxide ALD coating layers. The method for making the coated optical component includes depositing an atomic layer deposition (ALD) coating on a surface of the optical component, where the ALD coating can be a metalloid oxide, a metal oxide, a metal fluoride having a metal that is different from calcium, or combinations of these. Sulfur hexafluoride is used as a fluorine source in the ALD process.

A method can include vapor depositing a corrosion resistant coating to internal and external surfaces of a metallic air data probe. For example, vapor depositing can include using atomic layer deposition (ALD). The method can include placing the metallic air data probe in a vacuum chamber and evacuating the vacuum chamber before using vapor deposition. The corrosion resistant coating can be or include a ceramic coating. In certain embodiments, vapor depositing can include applying a first precursor, then applying a second precursor to the first precursor to form the ceramic coating.

An apparatus for performing a film forming process on a substrate, includes a rotary table, a separation region including a separation gas supply configured to supply a separation gas and a main ceiling surface configured to form a separation gas gap for the separation gas, a central region including a central ceiling surface arranged around the rotation center, a rotary shaft exhaust passage made of a tubular body and connected to the rotary table to rotate the rotary table about the rotation center, the rotary shaft exhaust passage having an exhaust path formed therein, a ceiling surface side exhaust passage formed to vertically penetrate a member constituting the central region, a first exhaust port configured to exhaust the first processing gas to one of the two exhaust passages, and a second exhaust port configured to exhaust the second processing gas to the other one of the two exhaust passages.