Carrier rings with radially-varied plasma impedance are provided herein. In some embodiments, a carrier ring may include an outer ring that holds a removable inner ring. The outer ring may be formed of a dielectric material such as ceramic. The inner ring may be formed of a metal such as aluminum to provide a desired impedance. In some other embodiments, a carrier ring is formed from a single piece with radially-varying impedances.

A reaction chamber includes a chamber body and a base. The base is arranged in the chamber body. The base includes a carrier member, a first block ring, and a second block ring. The carrier member is configured to carry a substrate and an edge member arranged around the carrier member. A height of an upper surface of the carrier member is greater than a height of an upper surface of the edge member. The first block ring is arranged on the upper surface of the edge member and around the carrier member. The upper surface of the carrier member is higher than an upper surface of the first block ring. The second block ring is on the upper surface of the first block ring. The second block ring includes a body member and a shield member.

A substrate processing apparatus, including a reaction chamber enclosing a substrate processing space and a chemical exit space, further including a substrate support. The apparatus is configured to direct a chemical flow into the substrate processing space, to expose a substrate supported by the substrate support to surface reactions, therefrom via a first gap into a first expansion volume of the chemical exit space, and therefrom via a second gap towards an exhaust pump, the apparatus being configured to provide the chemical flow with a choked flow effect in at least one of the first and second gaps.

A vapor deposition device is provided that can correct a positional offset of a carrier in a rotation direction relative to a wafer when the vapor deposition device is viewed in a plan view. The vapor deposition device includes a load-lock chamber provided with a holder for supporting the carrier, and the carrier and the holder are provided with a correction mechanism that corrects a position of the carrier in a rotation direction when the vapor deposition device is viewed in a plan view.

An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

A purge baffle for a substrate support includes an annular ring configured to surround an outer perimeter around the substrate support in a volume below the substrate support and a first portion. The first portion includes a plenum defined below the first portion and outside of the annular ring in the volume below the substrate support and a plurality of openings that provide respective flow paths from a region above the first portion into the plenum. At least a first opening of the plurality of openings has a first conductance and at least a second opening of the plurality of openings has a second conductance that is different than the first conductance.

A thin film deposition apparatus includes: a chamber configured to process a plurality of substrates; a plurality of heater members disposed to correspond to the substrates to heat the substrates; a plurality of lift pins configured to be elevated through the heater members and support lower surfaces of the substrates; a plurality of support plates on which lower ends of the lift pins are configured to be seated; a plurality of support columns coupled with and supporting the heater members; and a plurality of spray ports configured to supply a process gas to the substrates, wherein the support plates are mounted on a plurality of seats formed on at least one side of the chamber, and configured to be elevated together with the heater members when the heater members are elevated.

A thin film deposition apparatus includes: a chamber configured to process a plurality of substrates; a plurality of heater members disposed to correspond to the substrates to heat the substrates, respectively; a plurality of lift pins configured to support lower surfaces of the substrates while elevating through the heater members, respectively; a plurality of heat shield plates, having a heat shield function between the heater members, on which lower ends of the lift pins are configured to be seated; and a plurality of support columns coupled with and supporting the heater members.

An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable the raising and lowering of a shadow ring within a process chamber either simultaneously with or separately from a plurality of substrate lift pins. The shadow ring is raised and lowered using a shadow ring lift assembly and may be raised to a pre-determined height above the substrate during a radical treatment operation. The shadow ring lift assembly may also raise and lower the plurality of substrate lift pins to enable both the shadow ring and the substrate lift pins to be raised to a transfer position when the substrate is being transferred into or out of the process chamber.