A liquid formulation of an ophthalmic drug in a pre-filled pharmaceutical package, for example a syringe, cartridge, vial or any other vessel made in part or in whole of a thermoplastic polymer, coated on the interior with a tie coating or layer, a barrier coating or layer, a pH protective coating or layer, and optionally a lubricity coating or layer. A blister, a pouch, a bag, a tray or a tub may encompass as a secondary packaging the syringe, vial, cartridge, tube or any other vessel. The package is suitable for sterilization (e.g., surface and/or terminal sterilization) with sterilization gas residuals being minimal and/or lower than required by ISO 10993-7; and/or the stability of the ophthalmic drug is maintained, during a prolonged time period following the sterilization. The sterilization gas may be EO, propylene oxide, chlorine dioxide, nitrogen dioxide, or vaporized hydrogen peroxide (VHP), among others.

A coating apparatus includes a chamber body having a reaction chamber, a supporting rack, a monomer discharge source and a plasma generation source. The supporting rack has a supporting area for supporting the substrate. The monomer discharge source has a discharge inlet for introducing a coating forming material into the reaction chamber. The plasma generation source is arranged for exciting the coating forming material, wherein the supporting area of the supporting rack is located at a position between the monomer discharge source and the plasma generation source, so that the coating is evenly formed on the surface of the substrate, and the deposition velocity is increased.

A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.

Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.

Embodiments of systems and methods for RF power distribution in a multi-zone electrode array are described. A system may include a plasma source configured to generate a plasma field. Also, the system may include an RF power source coupled to the plasma source and configured to supply RF power to the plasma source. The system may also include a source controller coupled to the RF power source and configured to control modulation of the RF power supplied to the plasma source to enhance uniformity of a plasma field generated by the plasma source.

An electrode assembly and a plasma enhanced chemical vapor deposition equipment, include an electrode rod, an adjusting sleeve, a fixing sleeve and a regulating assembly. The adjusting sleeve is configured to fix the electrode rod. The fixing sleeve is configured to be connected to a tail electrode flange. The adjusting sleeve is connected to the electrode rod and positioned coaxially with the electrode rod. The fixing sleeve is provided with an adjusting hole along an axis of the fixing sleeve. The adjusting sleeve is installed within the adjusting hole. The regulating assembly is configured to regulate a coaxiality of the adjusting sleeve with respect to the fixing sleeve.

An in-chamber plasma source in a deposition reactor system includes an array of microcavity or microchannel plasma devices having a first electrode and a second electrode isolated from plasma in microcavities or microchannels. An inlet provides connection to deposition precursor. A region interacts deposition precursor with plasma. An outlet directs precursor dissociated with the plasma onto a substrate for deposition. A reactor system includes a substrate holder across from the outlet, a chamber enclosing the in-chamber plasma source and the substrate holder, an exhaust from the chamber, and conduit supplying precursors from sources or bubblers to the inlet. A reactor system can conduct plasma enhanced atomic layer deposition at high pressures and is capable of forming a complete layer in a single cycle.