Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A method of producing electrically conductive metallic structures in or on textiles, which has the following steps: (a) introducing at least one non-conducting precursor compound into a fibre or yarn material during or after the production thereof, wherein the at least one precursor compound is an inorganic metal phosphate compounds, a metal oxide or a spinel of the general formula AB.sub.2O.sub.4, (b) producing a textile from the fibre or yarn material, (c) irradiating the textile with electromagnetic radiation, preferably with laser light in the regions of the electrically conductive structures to be produced, with the release of metallisation seeds, and (d) electrical or non-electrical treatment of the textile with deposit of metals at the metallisation seeds with the production of conductive structures in the textile.

A method for patterning a metal layer on a substrate is disclosed. Furthermore, a kit comprising a first composition comprising a reducing agent and a second composition comprising a metal salt, and an article comprising a substrate in contact with a metal layer are also disclosed.

A process of manufacturing a multilayer sheet having electrically conductive patterns comprises feeding a first polymer layer and a second polymer composition to a calendering stack, the first polymer layer having an inner electrically conductive pattern disposed thereon, the first polymer layer comprising a first polymer composition, which contains a first polymer having a first glass transition temperature, and the second polymer composition comprising a second polymer and a laser direct structure additive (LDS), the second polymer having a second glass transition temperature that is 50 to 100° C. lower than the first glass transition temperature; pressing the first polymer layer and the second polymer composition together to laminate a second polymer layer which comprises the second polymer composition to the first polymer layer, the second polymer layer having an inner surface facing the inner electrically conductive pattern of the first polymer layer and an opposing outer surface; forming an activated surface pattern on the outer surface of the second polymer layer; and applying a conductive metal on the activated surface pattern, wherein the first polymer layer is in direct physical contact with the second polymer layer.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A method for manufacturing electrically conductive structures, preferably conductive pathway structures using laser beams on a non-conductive carrier (LDS method), wherein a non-conductive carrier material is provided which contains at least one inorganic metal phosphate compound and at least one stabiliser finely distributed or dissolved therein, the carrier material is irradiated in regions by laser beams generating the electrically conductive structures in the irradiated regions.

The present invention relates to a thermoplastic resin composition for laser direct structuring process, and a molded product comprising the same. In one specific embodiment, the thermoplastic resin composition comprises: approximately 100 parts by weight of a base resin; approximately 0.1-20 parts by weight of an additive for laser direct structuring; and approximately 1-20 parts by weight of an impact modifier, wherein the base resin comprises a polycarbonate resin, a polycarbonate-polysiloxane copolymer and a polyester resin.

A method for producing a plated part, includes: forming, on a surface of a base member, a catalyst activity inhibiting layer containing a polymer which has at least one of an amide group and an amino group; irradiating with light or heating a part of the surface of the base member on which the catalyst activity inhibiting layer is formed; applying an electroless plating catalyst to the surface of the base member heated or irradiated with the light; and bringing an electroless plating solution into contact with the surface of the base member to which the electroless plating catalyst is applied, to form an electroless plating film at a light-irradiated portion or a heated portion of the surface.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Provided is a method that is for manufacturing a conductive pattern-provided structure, that involves simple manufacturing steps, and that enables formation of a conductive pattern-provided structure having excellent interlayer adhesion. One mode of the present invention provides a method for manufacturing a conductive pattern-provided structure, the method comprising: a coating film formation step for obtaining a coating film by printing, on a base material, a dispersion that contains copper oxide-containing particles; and a plating step for performing electroless plating on the coating film by using a plating solution. The plating solution contains EDTA (ethylenediaminetetraacetic acid).