A manufacturing method of a substrate structure including the following steps is provided. A chemical surface treatment is performed on a metal base such that a passivation layer is formed on a surface of the metal base. The metal base is assembled to a substrate. A metal pattern is formed on the substrate, wherein the metal pattern is separated from the metal base. A substrate structure and a metal component are also provided.

The invention relates to anti-multipactor coating deposited onto a substrate that can be exposed to the air and its procedure of obtainment by simple chemical methods. Furthermore, the present invention relates to its use for the fabrication of high power devices working at high frequencies.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

In one embodiment, a phase change material is encapsulated by forming a phase change material pellet, coating the pellet with flexible material, heating the coated pellet to melt the phase change material, wherein the phase change materials expands and air within the pellet diffuses out through the flexible material, and cooling the coated pellet to solidify the phase change material.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Electrically-conductive silver metal is provided in a pattern on a substrate having a first supporting side and a second opposing supporting side. One or both of the first supporting side and the second opposing supporting side has one or more electrically-conductive silver metal containing patterns containing the electrically-conductive silver metal; an α-oxy carboxylate; a 5- or 6-membered N-heteroaromatic compound; and a polymer that is either (i) a hydroxy-containing cellulosic polymer or (ii) a non-cellulosic acrylic polymer having a halo- or hydroxy-containing side chain. Such articles can be used in various devices and electrodes.

Disclosed is an AlNiCo-based hard magnetic particle containing Al, Ni, Co, Cu, Ti, and the balance of Fe. The AlNiCo-based hard magnetic particle contains Co in an amount of 10 to 17 wt %, has a coercive force of 250-450 Oe, and has a residual magnetization/coercive force rate of 0.06 or more. The AlNiCo-based hard magnetic particle according to the present invention can advantageously guarantee magnetic properties suitable for being detected by a magnetic reluctance device due to a low content of Co.

An example method of coating a substrate involves cleaning the substrate and, after cleaning the substrate, sensitizing the substrate using a sensitizing solution including tin chloride and hydrochloric acid. The method also involves, after sensitizing the substrate, activating the substrate in an activating solution including palladium chloride and hydrochloric acid. Further, the method involves subsequently neutralizing the substrate using a neutralizing solution including ammonium hydroxide. Still further, the method involves, after neutralizing the substrate, depositing an electroless nickel layer on the substrate. The method may then involve depositing an electrolytic nickel layer on top of the electroless nickel layer, and depositing an outer layer of metallic material, ceramic material, polymeric material, or any combination thereof on top of the electrolytic nickel layer.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Provided is a surface-metalized polymer article comprising a polymer component having a surface, a first layer of multiple functionalized graphene sheets having a first chemical functional group, multiple functionalized carbon nanotubes having a second chemical group functional group, or a combination of both, which are coated on the polymer component surface, and a second layer of a plated metal deposited on the first layer, wherein the multiple functionalized graphene sheets contain single-layer or few-layer graphene sheets and/or the multiple functionalized carbon nanotubes contain single-walled or multiwalled carbon nanotubes, and wherein the multiple functionalized graphene sheets or functionalized carbon nanotubes are bonded to the polymer component surface with or without an adhesive resin.