Disclosed herein are methods comprising: illuminating a first location of an optothermal substrate with electromagnetic radiation; wherein the optothermal substrate converts at least a portion of the electromagnetic radiation into thermal energy; and wherein the optothermal substrate is in thermal contact with a liquid sample comprising a plurality of thermally reducible metal ions; thereby: generating a confinement region at a location in the liquid sample proximate to the first location of the optothermal substrate; trapping at least a portion of the plurality of thermally reducible metal ions within the confinement region; and thermally reducing the trapped portion of the plurality of thermally reducible metal ions; thereby: depositing a metal particle on the optothermal substrate at the first location. Also disclosed herein are systems for performing the methods described herein. Also disclosed herein are patterned substrates made by the methods described herein, and methods of use thereof.

The impeller comprises: an impeller body (21) which includes a surface part (27) formed to a fixed depth (D) from a surface (21a) thereof, and which is made of Al or an Al alloy; and an NiP-based electroless-plated film (23) covering the surface (21a) of the impeller body (21), wherein the surface part (27) has a first compressive residual stress (P1).

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

Embodiments of the invention include a method of initiating an optical fiber. In some embodiments, a distal portion of the optical fiber is coated with an energy absorbing material. In some embodiments, the material includes a metal flakes or powder dispersed in a solution of organic solvents. After the material dries, laser energy is fired through the optical fiber. The laser energy can be absorbed in the material and ignites the organic solvents. This combustion melts the material of the optical fiber, and impregnates the optical fiber with the metal flakes or powder of the material. The resulting optical fiber is thus permanently modified so that the energy applied through the fiber is partially absorbed and converted to heat.

Disclosed herein are methods comprising: illuminating a first location of an optothermal substrate with electromagnetic radiation; wherein the optothermal substrate converts at least a portion of the electromagnetic radiation into thermal energy; and wherein the optothermal substrate is in thermal contact with a liquid sample comprising a plurality of thermally reducible metal ions; thereby: generating a confinement region at a location in the liquid sample proximate to the first location of the optothermal substrate; trapping at least a portion of the plurality of thermally reducible metal ions within the confinement region; and thermally reducing the trapped portion of the plurality of thermally reducible metal ions; thereby: depositing a metal particle on the optothermal substrate at the first location. Also disclosed herein are systems for performing the methods described herein. Also disclosed herein are patterned substrates made by the methods described herein, and methods of use thereof.

A package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant configured so that electrically conductive material is not plateable thereon.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A circuit board has a dielectric core, a foil top surface, and a thin foil bottom surface with a foil backing of sufficient thickness to absorb heat from a laser drilling operation to prevent the penetration of the thin foil bottom surface during laser drilling. A sequence of steps including a laser drilling step, removing the foil backing step, electroless plating step, patterned resist step, electroplating step, resist strip step, tin plate step, and copper etch step are performed, which provide dot vias of fine linewidth and resolution.