Method and apparatus for reducing metal oxide surfaces to modified metal surfaces and cooling the metal surfaces are disclosed. By exposing a metal oxide surface to remote plasma, the metal oxide surface on a substrate can be reduced to pure metal. A remote plasma apparatus can treat the metal oxide surface as well as actively cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus can be configured to actively cool the substrate during and/or after reducing the metal oxide to pure metal using an active cooling system. The active cooling system can include one or more of an actively cooled pedestal, an actively cooled showerhead, and one or more cooling gas inlets for delivering cooling gas to cool the substrate.

Devices produced by patterning electroless metals on a substrate are presented. An active catalyst layer on the substrate is covered with a patterned mask and treated with a deactivating chemical reagent, which deactivates the catalyst layer not covered by the mask. Once the patterned mask is removed, the electroless metal layer can be placed to have a patterned electroless metals. Alternatively, a substrate can be coated with a blocking reagent in a pattern first to inhibit formation of the catalyst layer before a catalyst layer can be placed over the blocking agent layer and then electroless metal layer is placed on the catalyst layer. The pattern of the blocking reagent acts as a negative pattern of the final conductive line pattern.

Methods and devices for patterning electroless metals on a substrate are presented. An active catalyst layer on the substrate can be covered with a patterned mask and treated with a deactivating chemical reagent, which deactivates the catalyst layer not covered by the mask. Once the patterned mask is removed, the electroless metal layer can be placed to have a patterned electroless metals. Alternatively, a substrate can be coated with a blocking reagent in a pattern first to inhibit formation of the catalyst layer before a catalyst layer can be placed over the blocking agent layer and then electroless metal layer is placed on the catalyst layer. The pattern of the blocking reagent acts as a negative pattern of the final conductive line pattern.

A method is provided for metallization of substrates providing a high adhesion of the deposited metal to the substrate material and thereby forming a durable bond. The method applies novel adhesion promoting agents comprising nanometer-sized particles prior to metallization. The particles have at least one attachment group bearing a functional chemical group suitable for binding to the substrate.

Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate can be reduced to pure metal and the metal reflowed. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, form a remote plasma of a reducing gas species where the remote plasma includes radicals, ions, and/or ultraviolet (UV) radiation from the reducing gas species, and expose a metal seed layer of the substrate to the remote plasma to reduce oxide of the metal seed layer to metal and to reflow the metal.

Methods and devices for patterning electroless metals on a substrate are presented. An active catalyst layer on the substrate can be covered with a patterned mask and treated with a deactivating chemical reagent, which deactivates the catalyst layer not covered by the mask. Once the patterned mask is removed, the electroless metal layer can be placed to have a patterned electroless metals. Alternatively, a substrate can be coated with a blocking reagent in a pattern first to inhibit formation of the catalyst layer before a catalyst layer can be placed over the blocking agent layer and then electroless metal layer is placed on the catalyst layer. The pattern of the blocking reagent acts as a negative pattern of the final conductive line pattern.

Methods and devices for patterning electroless metals on a substrate are presented. An active catalyst layer on the substrate can be covered with a patterned mask and treated with a deactivating chemical reagent, which deactivates the catalyst layer not covered by the mask. Once the patterned mask is removed, the electroless metal layer can be placed to have a patterned electroless metals. Alternatively, a substrate can be coated with a blocking reagent in a pattern first to inhibit formation of the catalyst layer before a catalyst layer can be placed over the blocking agent layer and then electroless metal layer is placed on the catalyst layer. The pattern of the blocking reagent acts as a negative pattern of the final conductive line pattern.

Devices and methods for metalizing temperature sensitive materials including fabrics are provided. Contemplated method begins with a step of applying a catalyst solution on the temperature-sensitive material to form an at least partially catalyst-coated substrate. Then the catalyst-coated substrate is incubated at a relatively low temperature. Optionally, in some embodiments, the low temperature incubated substrate is incubated at a relatively high temperature. Then, a layer of an electroless metal is deposited on the at least partially catalyst-coated substrate using an electroless metal deposition technique.

A pre-treatment method of plating and a plating system can perform a uniform plating process in which sufficient adhesivity on a surface of a substrate is obtained. The pre-treatment method of plating includes a coupling layer forming process of forming a titanium-based coupling layer 21b on the surface of the substrate with a titanium coupling agent; and a coupling layer modification process of modifying a surface of the titanium-based coupling layer 21b with a modifying liquid after the coupling layer forming process.