The invention relates to a process for coating plastics or plastic surfaces with metals, especially plastics composed of acrylonitrile/butadiene/styrene copolymers (ABS) and composed of mixtures of these copolymers with other plastics (e.g. ABS blends), wherein the process comprises the pretreatment of the plastic surfaces with a composition C (etch solution) comprising at least two different ionic liquids IL1 and IL2.

The invention relates to a process for coating plastics or plastic surfaces with metals, especially plastics composed of acrylonitrile/butadiene/styrene copolymers (ABS) and composed of mixtures of these copolymers with other plastics (e.g. ABS blends), wherein the process comprises the pretreatment of the plastic surfaces with a composition C (etch solution) comprising at least two different ionic liquids IL1 and IL2.

A method for reducing adhesion between a maskant and a substrate, wherein the maskant is adhered to a surface of the substrate, the method comprising applying a composition to the maskant.

Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed on the electroless nickel-phosphorus plating layer, and has a plurality of recesses formed on a surface thereof to be joined with solder.

Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a trace disposed on a conductive layer. The semiconductor package has one or more adhesion anchoring points and a plurality of portions on the trace. An adhesion anchoring point is between two portions on the trace. A surface roughness of an adhesion anchoring point is greater than a surface roughness of a portion on the trace. The trace may be a high-speed input/output (HSIO) trace. The semiconductor package may include via pads disposed on each end of the trace, and a dielectric disposed on the trace. The dielectric is patterned to form openings on the dielectric that expose second portions on the trace. The dielectric remains over the portions. The semiconductor package may have a chemical treatment disposed on the exposed openings on the trace to form the adhesion anchoring points.

Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a trace disposed on a conductive layer. The semiconductor package has one or more adhesion anchoring points and a plurality of portions on the trace. An adhesion anchoring point is between two portions on the trace. A surface roughness of an adhesion anchoring point is greater than a surface roughness of a portion on the trace. The trace may be a high-speed input/output (HSIO) trace. The semiconductor package may include via pads disposed on each end of the trace, and a dielectric disposed on the trace. The dielectric is patterned to form openings on the dielectric that expose second portions on the trace. The dielectric remains over the portions. The semiconductor package may have a chemical treatment disposed on the exposed openings on the trace to form the adhesion anchoring points.

A novel pretreating liquid for electroless plating which is used simultaneously with reduction treatment after roughening treatment of a filler-containing insulating resin substrate. A pretreating liquid for electroless plating is used simultaneously with reduction treatment when an insulating resin substrate containing a filler is roughened and residues generated on the insulating resin substrate are reduced. The pretreating liquid comprises: a reducing agent; and at least one selected from the group consisting of ethylene-based glycol ether represented by CmH(2m+1)-(OC.sub.2H.sub.4)n-OH (m=an integer of 1 to 4, n=an integer of 1 to 4) and propylene-based glycol ether represented by CxH(2x+1)-(OC.sub.3H.sub.6)y-OH (x=an integer of 1 to 4, y=an integer of 1 to 3).

A novel pretreating liquid for electroless plating which is used simultaneously with reduction treatment after roughening treatment of a filler-containing insulating resin substrate. A pretreating liquid for electroless plating is used simultaneously with reduction treatment when an insulating resin substrate containing a filler is roughened and residues generated on the insulating resin substrate are reduced. The pretreating liquid comprises: a reducing agent; and at least one selected from the group consisting of ethylene-based glycol ether represented by CmH(2m+1)-(OC.sub.2H.sub.4)n-OH (m=an integer of 1 to 4, n=an integer of 1 to 4) and propylene-based glycol ether represented by CxH(2x+1)-(OC.sub.3H.sub.6)y-OH (x=an integer of 1 to 4, y=an integer of 1 to 3).

A method for reducing adhesion between a maskant and a substrate, wherein the maskant is adhered to a surface of the substrate, the method comprising applying a composition to the maskant.

A method for reducing adhesion between a maskant and a substrate, wherein the maskant is adhered to a surface of the substrate, the method comprising applying a composition to the maskant.