Disclosed are an anode active material for lithium secondary batteries, the anode active material comprising: a core part including a carbon-silicon complex and having a cavity therein; and a coated layer which is formed on the surface of the core part and includes a phosphor-based alloy.

The present invention relates to a method for preventing the metallization of a support of at least one plastic part subjected to a metallization process, comprising the successive stages of oxidation of the surface of said part, of activation of the oxidized surface and of chemical and/or electrochemical deposition of metal on the activated surface, characterized in that it comprises a stage in which said support, before said oxidation stage, is brought into contact with an inhibiting solution comprising at least one specific metallization inhibitor. The invention also relates to a process for the selective metallization of a plastic part combined with a support, comprising bringing said part into contact with said inhibiting solution.

The present invention relates to additives which may be employed in electroless metal and metal alloy plating baths and a process for use of said plating baths. Such additives reduce the plating rate and increase the stability of electroless plating baths and therefore, such electroless plating baths are particularly suitable for the deposition of said metal or metal alloys into recessed structures such as trenches and vias in printed circuit boards, IC substrates and semiconductor substrates. The electroless plating baths are further useful for metallisation of display applications.

The present invention relates to additives which may be employed in electroless metal and metal alloy plating baths and a process for use of said plating baths. Such additives reduce the plating rate and increase the stability of electroless plating baths and therefore, such electroless plating baths are particularly suitable for the deposition of said metal or metal alloys into recessed structures such as trenches and vias in printed circuit boards, IC substrates and semiconductor substrates. The electroless plating baths are further useful for metallisation of display applications.

The present invention concerns a method for forming a metal layer for electromagnetic shielding and thermal management of active components, preferably by wet chemical metal plating, using an adhesion promotion layer on the layer of molding compound and forming at least one metal layer on the adhesion promotion layer or forming at least one metal layer on the adhesion promotion layer by wet chemical metal plating processes.

A substrate liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid to an upper surface of the substrate held by the substrate holder; a cover body configured to cover the upper surface of the substrate held by the substrate holder; and a gas supply configured to supply an inert gas to a space between the substrate held by the substrate holder and the cover body, the gas supply having a gas supply opening through which the inert gas is discharged. An opening direction of the gas supply opening is directed to a direction other than the upper surface of the substrate held by the substrate holder.

Provided is a semiconductor device, including: a front-back conduction-type semiconductor element; a front-side electrode formed on the front-back conduction-type semiconductor element; an electroless nickel-containing plating layer formed on the front-side electrode; and an electroless gold plating layer formed on the electroless nickel-containing plating layer, wherein the semiconductor device has a low-nickel concentration layer on a side of the electroless nickel-containing plating layer in contact with the electroless gold plating layer, and wherein the low-nickel concentration layer has a thickness smaller than that of the electroless gold plating layer.

Provided is a semiconductor device, including: a front-back conduction-type semiconductor element; a front-side electrode formed on the front-back conduction-type semiconductor element; an electroless nickel-containing plating layer formed on the front-side electrode; and an electroless gold plating layer formed on the electroless nickel-containing plating layer, wherein the semiconductor device has a low-nickel concentration layer on a side of the electroless nickel-containing plating layer in contact with the electroless gold plating layer, and wherein the low-nickel concentration layer has a thickness smaller than that of the electroless gold plating layer.

A phenol resin composition used in a resin molded body for which a plating process is applied to a surface includes component (A), which is phenol resin and component (B), which is calcium carbonate.

Provided is a compound which is excellent terms of stability and tight adhesion to substrates and on which wiring can be formed by electroless plating. The compound is a high-molecular-weight compound having a constituent unit represented by the following formula (1). [In formula (1), R1 represents a hydrogen atom or a methyl group, m is an integer of 2-20, and Q represents a photosensitive leaving group.]