A multilayer ceramic capacitor includes a multilayer body including a plurality of dielectric layers and a plurality of internal electrodes, wherein the dielectric layers and the internal electrodes are stacked alternately; and external electrodes provided on end surfaces of the multilayer body and electrically connected to the internal electrodes, wherein the dielectric layers each include main crystal grains including calcium and/or strontium, and zirconium; and an additive component including lithium, the internal electrodes include copper, and the dielectric layers have lithium concentrations with a standard deviation of about 1.03 atomic percent or less in the thickness direction.

A ceramic composite material and a method for producing same. The ceramic composite material has a ceramic matrix comprising zirconium oxide and at least one secondary phase dispersed therein. The matrix is composed of zirconium oxide as at least 51 vol.-% of composite material, and the secondary phase is in a proportion of 1 to 49 vol.-% of composite material, wherein 90 to 99% of the zirconium oxide is present in the tetragonal phase based on the total zirconium oxide portion. The tetragonal phase of the zirconium oxide is stabilized by at least one member selected from the group consisting of chemical stabilization and mechanical stabilization. The ceramic composite is damage-tolerant.

A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a Cu—Kα X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3° to 2.0°.

Provided is a zirconia sintered body that suppresses discoloration due to porcelain. The zirconia sintered body comprises at least one of a coloring agent A: erbium oxide and a coloring agent B: nickel oxide, and a composite oxide of zirconium and vanadium.

A method for producing a counter-form (20) for manufacturing a part having a complex shape (24) by pressure sintering densification. The counter-form (20) is formed from successive layers produced by numerically-controlled three-dimensional (3D) additive printing according to the following steps: numerically recording a three-dimensional negative of the part to be produced (24) in a control unit of a three-dimensional additive printing system in order to constitute the positive form of the counter-form to be produced; producing the counter-form (20) using a 3D additive printing technique. The part having a complex shape (24d) is then manufactured by pressure sintering, then separated from the counter-form which is also sintered (20).

This invention relates to a method for manufacturing a part of complex shape (3) by successive deposition of layers according to a technique of 3D additive printing and pressure sintering, comprising the following steps: an initial step of producing a model (1) from a material chosen from a porous or pulverulent material based on a metal alloy, a ceramic, a composite material and a lost material by formation of successive layers deposited according to the digitally controlled 3D additive printing technique, followed by a step of introducing a preform (1) made of porous or pulverulent material to be densified, derived from the model (1), into a mold (2) filled with a sacrificial porous or pulverulent material (13) in addition to the preform (1), the uniaxial densifying pressure sintering (10) then being applied to the mold (2) in order to form the part (3) which is finally extracted from the mold (2).

The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S200, further adjusting the C/T phase boundary and the O/R phase boundary: further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and Step S300, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d.sub.33 and different Curie temperatures T.sub.C in the process.

The electrolyte membrane of the present disclosure includes a plurality of crystal domains. At least one of the crystal domains includes a first crystal subdomain and a second crystal subdomain. Each of the first crystal subdomain and the second crystal subdomain includes Ba, Zr, M, and O. M is a trivalent element. The concentration of M in the first crystal subdomain is different from the concentration of M in the second crystal subdomain.

The present invention provides a lead-free piezoelectric material having a high piezoelectric constant and a high mechanical quality factor in a wide operating temperature range. The piezoelectric material includes a perovskite-type metal oxide represented by Formula (1):
(Ba.sub.1-xCa.sub.x).sub.a(Ti.sub.1-yZr.sub.y)O.sub.3 (1.00≦a≦1.01, 0.125≦x<0.155, and 0.041≦y≦0.074)
as a main component. The metal oxide contains Mn in a content of 0.12 parts by weight or more and 0.40 parts by weight or less based on 100 parts by weight of the metal oxide on a metal basis.

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.