A metal oxide macroscopic fiber and a preparation method thereof, the method including: adding, as a spinning dope, an anionic metal oxide aqueous colloidal solution into wet spinning equipment, extruding the spinning dope from the spinning equipment into a thread, injecting the extruded thread into a coagulating bath containing a flocculating agent to obtain as-spun fiber, and repeatedly washing the resulted as-spun fiber with deionized water and drying same, thereby obtaining a metal oxide fiber. Said method makes the process simple and controllable, being adaptable to production on a large scale. The prepared metal oxide fiber having special physical and chemical properties is widely applicable in terms of intelligent spinning, biomedicine, energy recycling and conversion, and the field of microelectronic devices and the like.

A semiconductor ceramic composition including a compound represented by the following general formula (1) as a main component.
(Ba.sub.vBi.sub.xA.sub.yRE.sub.w).sub.m(Ti.sub.uTM.sub.z)O.sub.3(1)
(wherein, A represents both elements of Na and K; RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; and TM is at least one element selected from the group consisting of V, Nb and Ta.)
0.01x0.15(2)
xy0.3(3)
0(w+z)0.01(4)
v+x+y+w=1(5)
u+z=1(6)
0.950m1.050(7)
further, 0.001 mol to 0.055 mol of Ca is included and the ratio of Na/(Na+K) is 0.1 or more and less than 1.

A ceramic represented by: (1-m)PbSc.sub.0.5xTa.sub.0.5+xO.sub.3-mPbMg.sub.0.5yW.sub.0.5+yO.sub.3, wherein, 0.03m0.60; x, y0.1 and 0x+y0.13 when 0x, y; 0.1x<0 and 0y0.1 when 0>x and 0y; 0.1x, y and 0.13x+y<0 when 0x and 0>y; and 0<x0.1 and 0.1y<0 when 0<x and 0>y.

The present invention related to a method to make capacitor grade powder. The method includes the use of a spray dryer that includes a rotating atomizer disk to form agglomerated powder and the method further includes a heat treatment step. Capacitor grade powder formed by the methods of the present invention are further described.

A semiconductor ceramic composition including a compound represented by the following general formula (1) as a main component.

(Ba.sub.vBi.sub.xA.sub.yRE.sub.w).sub.m(Ti.sub.uTM.sub.z)O.sub.3 (1)

(wherein, A represents both elements of Na and K; RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; and TM is at least one element selected from the group consisting of V, Nb and Ta.)

0.01x0.15 (2)

xy0.3 (3)

0(w+z)0.01 (4)

v+x+y+w=1 (5)

u+z=1 (6)

0.950m1.050 (7)

further, 0.001 mol to 0.055 mol of Ca is included and the ratio of Na/(Na+K) is 0.1 or more and less than 1.

A dielectric ceramic having: a rutile compound represented by (Ti.sub.xSn.sub.1x)O.sub.2 as a main constituent; and Nb, wherein 0.40x0.60, and in a sectional view the dielectric ceramic includes: a Ti-rich phase region in which A is 0.55 or more, a Sn-rich phase region in which B is 0.55 or more, A=(Ti content (atom %))/(total content of Ti and Sn (atom %)), B=(Sn content (atom %))/(total content of Ti and Sn (atom %)), 0.005 mol %y0.020 mol %, 16 nmD.sub.Ti20 nm, 15 nmD.sub.Sn19 nm, wherein y (mol %) is a content of Nb with respect to 100 mol % of a content of the rutile compound, D.sub.Ti (nm) is an average size of the Ti-rich phase region, and D.sub.Sn (nm) is an average size of the Sn-rich phase region.