Patent classifications
C04B2235/3255
Modified NiTa.SUB.2.O.SUB.6.-based microwave dielectric ceramic material co- sintered at low temperature and its preparation method
The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa.sub.2O.sub.6-based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B.sub.2O.sub.3, and the radius of Cu.sup.2+ ions is similar to that of Ni.sup.2+ and Ta.sup.5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B.sub.2O.sub.3—Ta.sub.2O.sub.5, and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa.sub.2O.sub.6 is synthesized at a lower pre-sintering temperature, and NiTa.sub.2O.sub.6-based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.
Ultralimit alloy and preparation method therefor
The present disclosure belongs to the field of preparation technology and provides an ultralimit alloy and a preparation method therefor. The ultralimit alloy comprises an alloy matrix. A bonding layer and a ceramic layer are successively deposited on a surface of the alloy matrix. The alloy matrix includes one of a magnesium alloy matrix, an aluminium alloy matrix, a titanium alloy matrix, an iron alloy matrix, a nickel alloy matrix, a copper alloy matrix, a zirconium alloy, and a tin alloy. For an ultralimit magnesium alloy, an ultralimit aluminium alloy, an ultralimit nickel alloy, an ultralimit titanium alloy, an ultralimit iron alloy and an ultralimit copper alloy, the bonding layer is a composite bonding layer, the ceramic layer is a composite ceramic layer, and the outside of the composite ceramic layer is further successively deposited with a reflecting layer, a catadioptric layer, an insulating layer and a carbon foam layer.
Temperature insensitive dielectric constant garnets
Embodiments of synthetic garnet materials having advantageous properties, especially for below resonance frequency applications, are disclosed herein. In particular, embodiments of the synthetic garnet materials can have high Curie temperatures and dielectric constants while maintaining low magnetization. These materials can be incorporated into isolators and circulators, such as for use in telecommunication base stations.
MG-TA BASED DIELECTRIC CERAMIC FOR MULTI-LAYER CERAMIC CAPACITOR AND LOW-TEMPERATURE PREPARATION METHOD THEREOF
A Mg—Ta based dielectric ceramic for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By providing a glass additive with high matching with a Mg—Ta ceramic, a modifier A.sup.+1.sub.2CO.sub.3—B.sup.2+O—C.sup.3+.sub.2O.sub.3—SiO.sub.2 (A=Li, K; B=MnO, CuO, BaO; C=B, Al) is intruded in to a main material MgO—Ta.sub.2O.sub.5, which can significantly reduce the sintering temperature and provide a negative temperature coefficient of dielectric constant of −100±30 ppm/° C., and reduce the deterioration factors of loss caused by an additive for sintering, and prepare a dielectric material applied to RF MLCC with low loss, low cost and good process stability.
Hard piezoelectric ceramic composition for multilayer piezoelectric transformers
A composition includes at least one Pb/Ni/Nb - Pb/Mg/W - Pb/Zr/Ti mixed oxide. A piezoelectric device may be made by providing at least two layers comprising the composition and coated with an outer electrode material; providing a plurality of layers comprising the composition and coated with an inner electrode material; combining or stacking a plurality of layers coated with inner electrode materials between two outer electrodes; and sintering or co-firing the inner electrode materials and outer electrode materials at a temperature at or below about 1000° C.
Dielectric ceramic composition and ceramic capacitor using the same
The present invention discloses a dielectric ceramic formula enabling one to obtain a multilayer ceramic capacitor by alternatively stacking the ceramic dielectric layers and base metal internal electrodes. The dielectric ceramic composition comprises a primary ingredient:
[(Na.sub.1-xK.sub.x).sub.sA.sub.1-s].sub.m[(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]O.sub.3 wherein: A, B1, B2, x, y, s, u, v, w and m are defined.
Two-dimensional perovskite material, dielectric material and multi-layered capacitor including the same
A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.
DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE
A dielectric composition includes main phases having a tungsten bronze structure and first segregation phases. The first segregation phases include Ba and Si.
Dielectric material, method of preparing the same, and device comprising the dielectric material
Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
xAB.sub.3.(1−x)(Bi.sub.aNa.sub.b)TiO.sub.3 [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.
GARNET MATERIALS FOR LI SECONDARY BATTERIES AND METHODS OF MAKING AND USING GARNET MATERIALS
Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.