There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm.sup.3 and equal to or lower than 7.5 g/cm.sup.3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.

The present invention relates to a composite ceramic which comprises a conversion phosphor and a further material, characterized in that the further material has a negative coefficient of thermal expansion, and to a process for the preparation thereof. Furthermore, the present invention also relates to the use of the composite ceramic according to the invention as emission-converting material, preferably in a white light source, and to a light source, a lighting unit and a display device.

There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm.sup.3 and equal to or lower than 7.1 g/cm.sup.3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

A target for sputtering, use of the target and method of manufacture of the target is provided. The target has a single piece target material for sputter deposition, with at least 1 mm thickness of material for sputtering, having a lamellar structure and comprising a metal oxide with at least 50 wt. % or more of tungsten oxide. The atomic ratio of oxygen over tungsten results in a compound with oxygen deficiency with respect to the stoichiometric tungsten oxide. The method includes spraying metallic tungsten and/or tungsten oxide powder in amounts so as to provide a layer of material for sputtering being at least 1 mm thick and comprising non-stoichiometric tungsten oxide.

The present invention relates to a ceramic material for a multilayer capacitor. The ceramic material has a composition according to the following general formula:
Pb.sub.(y1.5a0.5b+c+0.5d0.5ef)Ca.sub.aA.sub.b(Zr.sub.1xTi.sub.x).sub.(1cded)E.sub.cFe.sub.dNb.sub.eW.sub.fO.sub.3, where A is one or more of the group of Na, K and Ag; E is one or more of the group of Cu, Ni, Hf, Si and Mn; and 0