We provide a method for the in situ development of graphene containing silicon carbide (SiC) matrix ceramic composites, and more particularly to the in situ graphene growth within the bulk ceramic through a single-step approach during SiC ceramics densification using an electric current activated/assisted sintering (ECAS) technique. This approach allows processing dense, robust, highly electrical conducting and well dispersed nanocomposites having a percolated graphene network, eliminating the handling of potentially hazardous nanostructures. Graphene/SiC components could be used in technological applications under strong demanding conditions where good electrical, thermal, mechanical and/or tribological properties are required, such as micro and nanoelectromechanical systems (MEMS and NEMS), sensors, actuators, heat exchangers, breaks, components for engines, armors, cutting tools, microturbines or microrotors.

A method of manufacturing a silicon carbide (SiC) sintered body and a SiC sintered body obtained by the method are provided. The method includes: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an AlC-based material, an AlBC-based material, and a BC-based material. Accordingly, a SiC sintered body that can be sintered at low temperature, can be densified, and has high strength and high electrical conductivity can be prepared.

The present invention relates to methods for preparing ceramic devices having a surface that has been activated to enhance properties including strength, porosity, and bioactivity. Activation may include forming a gel layer on the surface of a ceramic device using an alkali solution and modifying the surface using a modifying material. The invention further relates to ceramic devices prepared by the methods and methods of using the devices.

A method of forming a high purity ingot for wafer production, such as a silicon carbidewafer. Precursors are added to a reactor; at least part of a fiber is formed in the reactor from the precursors using chemical deposition interacting with the precursors; and granular material is then formed from the fiber. The method further includes forming the ingot from the granular material. In one aspect, the chemical deposition can include laser induced chemical vapor deposition. Further, the method can include separating one or more wafers from the ingot for use in semiconductor fabrication.

The present invention relates to a method of producing a SiCSi composite component. The method includes preparing a first molded body containing SiC particles by a 3D printing method, wherein the first molded body has a first average pore diameter M.sub.1; forming a second molded body, in which the first molded body and a dispersion containing carbon particles are brought into contact so that the pores are impregnated with the carbon particles, wherein the carbon particles have a secondary particle having an average particle diameter M.sub.2, and the carbon particles satisfy the following formula:
M.sub.2M.sub.1/10; and forming a SiCSi composite component by carrying out that the second molded body is impregnated with a metallic si and is reactively sintered; wherein the content of Si is in the range of 5% by mass to 40% by mass in the SiCSi composite component.

In an approach to synthesizing transparent ceramic windows, a powder is synthesized. A green body is fabricated from the powder. The green body is densified.