Patent classifications
C04B2235/3878
FRICTION STIR WELDING TOOL MEMBER MADE OF SILICON NITRIDE SINTERED BODY AND FRICTION STIR WELDING APPARATUS USING SAME
The present invention provides a welding tool member for friction stir welding comprising a silicon nitride sintered body, wherein the silicon nitride sintered body includes an additive component other than silicon nitride in a content of 15% by mass or less, and the additive component includes three or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. It is preferable that the content of the additive component is 3% by mass or more and 12.5% by mass or less. It is also preferable that the additive component includes four or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. Due to above structure, there can be provided a welding tool member for friction stir welding having a high durability.
Phosphor and light-emitting equipment using phosphor
Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.
METHOD FOR IMPROVING THE WEAR PERFORMANCE OF CERAMIC-POLYETHYLENE OR CERAMIC-CERAMIC ARTICULATION COUPLES UTILIZED IN ORTHOPEDIC JOINT PROSTHESES
Methods for improving the wear performance of silicon nitride and/or other ceramic materials, particularly to make them more suitable for use in manufacturing biomedical implants.
HONEYCOMB STRUCTURE, AND ELECTRIC HEATING SUPPORT AND EXHAUST GAS TREATMENT DEVICE EACH USING THE HONEYCOMB STRUCTURE
A honeycomb structure according to at least one embodiment of the present invention includes: a honeycomb structure portion having: an outer peripheral wall; and a partition wall arranged inside the outer peripheral wall to define a plurality of cells each extending from a first end surface of the honeycomb structure portion to a second end surface thereof to form a flow path; and a pair of electrode portions arranged on an outer peripheral surface of the outer peripheral wall of the honeycomb structure portion. The electrode portions are each a porous body in which particles of silicon carbide are bound by a binding material, the silicon carbide contains α-type silicon carbide and β-type silicon carbide, and the silicon carbide has a D50 in a volume-based cumulative particle size distribution of 25 μm or less.
SIALON SINTERED BODY AND CUTTING INSERT
A sialon sintered body and a cutting insert each having thermal shock resistance and VB wear resistance. The sialon sintered body and the cutting insert contain β-sialon and 21R-sialon and exhibit an X-ray diffraction peak intensity ratio R[(I.sub.21R/I.sub.A)×100] of 5% or greater and smaller than 30%, wherein I.sub.A represents the sum of the peak intensities of the sialon species, and I.sub.21R represents the peak intensity of 21R-sialon, the ratio being calculated from the peak intensities of the sialon species obtained by using X-ray diffractometry.
Sintered ceramic and ceramic sphere
Provided are a sintered ceramic and a ceramic sphere which are inhibited from suffering surface peeling due to fatigue resulting from repetitions of loading and can attain an improvement in dimensional accuracy when subjected to surface processing and which have excellent wear resistance and durability.
SiAlON ceramics and a method of preparation thereof
A Ca—SiAlON ceramic with enhanced mechanical properties and a method employing micron-sized and submicron precursors to form the Ca—SiAlON ceramic. The Ca—SiAlON ceramic comprises not more than 42 wt % silicon, relative to the total weight of the Ca—SiAlON ceramic. The method employs submicron particles and also allows for substituting a portion of aluminum nitride with aluminum to form the Ca—SiAlON ceramic with enhanced mechanical properties.
Sintered body, substrate, circuit board, and manufacturing method of sintered boy
A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.
INSERT AND CUTTING TOOL
An insert may include a sintered silicon nitride including β-Si.sub.3N.sub.4 as a main component. The area up to 0.5 mm deep from a surface of the sintered silicon nitride is a first region. The first region may include an oxygen content of less than 0.8% by mass. The first region may include ReMgSi.sub.2O.sub.5N (Re is at least one of Yb and Y). A cutting tool may include a holder that extends from a first end toward a second end and includes a pocket on a side of the first end, and the insert located at the pocket.
Phosphor and light-emitting equipment using phosphor
Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.