A method of producing an epoxy compound, which comprises reacting hydrogen peroxide with a compound having a carbon-carbon double bond, in the presence of at least one of a tungsten compound and a molybdenum compound; and an onium salt comprising 20 or more carbon atoms and one or more of substituents convertible to a functional group containing an active hydrogen or a salt thereof.

A method of producing an epoxy compound, which comprises reacting hydrogen peroxide with a compound having a carbon-carbon double bond, in the presence of at least one of a tungsten compound and a molybdenum compound; and an onium salt comprising 20 or more carbon atoms and one or more of substituents convertible to a functional group containing an active hydrogen or a salt thereof.

A composition for protective film formation can form a flat film that satisfactorily functions as a mask (protection) against wet etchants during semiconductor substrate processing and has a low dry etching rate, the composition having satisfactory covering and recess-filling properties when applied to rugged substrates and having a small thickness difference after the recess filling. A protective film, a resist underlayer film, and a resist-pattern-coated substrate each produced using the composition; and a method for producing a semiconductor device. The composition, which is for forming films for protection against wet etchants for semiconductors, includes an organic solvent and a compound that has a molecular end having a structure including at least one pair of adjoining hydroxyl groups and has a molecular weight of 1,500 or less, wherein particles present therein have an average particle diameter, as determined by a dynamic light scattering method, of 3 nm or smaller.

A composition for protective film formation can form a flat film that satisfactorily functions as a mask (protection) against wet etchants during semiconductor substrate processing and has a low dry etching rate, the composition having satisfactory covering and recess-filling properties when applied to rugged substrates and having a small thickness difference after the recess filling. A protective film, a resist underlayer film, and a resist-pattern-coated substrate each produced using the composition; and a method for producing a semiconductor device. The composition, which is for forming films for protection against wet etchants for semiconductors, includes an organic solvent and a compound that has a molecular end having a structure including at least one pair of adjoining hydroxyl groups and has a molecular weight of 1,500 or less, wherein particles present therein have an average particle diameter, as determined by a dynamic light scattering method, of 3 nm or smaller.

Disclosed herein are processes for producing 1,3-propanediol acrylate, 1,3-propanediol diacrylate, 1,3-propanediol monoacrylate component, 1,3-propanediol dimethylacrylate, and 1,3-propanediol diglycidyl ether. Also disclosed herein are compositions comprising 1,3-propanediol acrylate, 1,3-propanediol diacrylate, 1,3-propanediol monoacrylate component, 1,3-propanediol dimethylacrylate, and/or 1,3-propanediol diglycidyl ether.

Disclosed herein are processes for producing 1,3-propanediol acrylate, 1,3-propanediol diacrylate, 1,3-propanediol monoacrylate component, 1,3-propanediol dimethylacrylate, and 1,3-propanediol diglycidyl ether. Also disclosed herein are compositions comprising 1,3-propanediol acrylate, 1,3-propanediol diacrylate, 1,3-propanediol monoacrylate component, 1,3-propanediol dimethylacrylate, and/or 1,3-propanediol diglycidyl ether.