The invention is related to a soft-magnetic powder comprising coated particles, the coated particles comprising a core and a shell, the core having an average particle size D.sub.50 in a range from 0.1 μm to 100 μm and comprising iron, wherein the shell has a thickness of not more than 20 nm and comprises at least two solid oxides and wherein the shell comprises at least three layers and the shell comprises more than one layers of a first solid oxide and at least one layer of a second solid oxide, wherein the more than one layers of the first solid oxide and the at least one layer of the second solid oxide are arranged in an alternating manner. The invention is further related to a process for the production of the soft-magnetic powder, a use of the soft-magnetic powder and an electronic component comprising the soft-magnetic powder.

A method for fabricating a capacitor includes forming a first electrode, forming a dielectric layer stack on the first electrode, the dielectric layer stack including an initial hafnium oxide layer and a seed layer having a doping layer embedded therein, forming a thermal source layer on the dielectric layer stack to crystallize the initial hafnium oxide into tetragonal hafnium oxide, and forming a second electrode on the thermal source layer.

Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.

A method for fabricating a capacitor includes forming a first electrode, forming a dielectric layer stack on the first electrode, the dielectric layer stack including an initial hafnium oxide layer and a seed layer having a doping layer embedded therein, forming a thermal source layer on the dielectric layer stack to crystallize the initial hafnium oxide into tetragonal hafnium oxide, and forming a second electrode on the thermal source layer.

Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

The invention provides a molten Al—Si alloy corrosion resistant composite coating and a preparation method and application thereof. The composite coating layer comprises an aluminized layer and a TiO.sub.2 film layer from a surface of a substrate to the outside in sequence. The preparation method of the coating layer comprises the following steps: (step S1) making a surface treatment to an Fe-based alloy, and then aluminizing with a solid powder penetrant; (step S2) sand-blasting the aluminized Fe-based alloy; (step S3) washing and drying the Fe-based alloy which has been sand-blasted; and (step S4) depositing the TiO.sub.2 film layer on a surface of the dried aluminized Fe-based alloy by using an atom layer vapor deposition. The application of the molten Al—Si alloy corrosion resistant composite coating is used for a solar thermal power generation heat exchange tube.

Methods and apparatuses for depositing thin films using plasma-enhanced atomic layer deposition (PEALD) with ramping radio-frequency (RF) power are provided herein. Embodiments involve increasing the RF power setting of PEALD cycles after formation of initial screening layers at low RF power settings.

Wave-absorbing material powder of the present invention has oxidation resistance and salt fog resistance, which includes an iron-containing wave-absorbing material powder, and a metal oxide ceramic layer and a metal phosphate layer sequentially coated on an outside of the iron-containing wave-absorbing material powder from the inside to the outside. A method for preparing the wave-absorbing material powder includes using atomic layer deposition to coat the iron-containing wave absorbing material powder with a metal oxide ceramic coating, and then adopting the atomic layer deposition to coat the metal oxide ceramic coating with a metal phosphate layer; repeating the above steps to form an alternating nano-stack of the metal oxide ceramic coating and the metal phosphate layer outside the iron-containing absorbing material powder; and finally performing a high-temperature annealing treatment. The present invention improves temperature resistance, corrosion resistance and oxidation resistance of wave-absorbing materials.

Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer.

A layer system includes barrier properties against oxygen and water vapor. There may be an alternating layer system of at least two aluminum oxide layers and at least two titanium oxide layers. The aluminum oxide layers and the titanium oxide layers are deposited alternately on top of one another. The aluminum oxide layers and the titanium oxide layers are deposited by ALD layer deposition with a layer thickness of 5 nm to 20 nm. A first Parylene layer is deposited with a layer thickness of 0.1 μm to 50 μm on a first side of the alternating layer system by CVD.