A surface-coated cutting tool includes a base material and a coating covering the base material. The base material includes a rake face and a flank face. The coating includes a TiCN layer. The TiCN layer has a (422) orientation in a region d1 in the rake face. The TiCN layer has a (311) orientation in a region d2 in the flank face.

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70 C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.

A method for solvent-free perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate holder into a deposition chamber, pumping down to a high vacuum pressure, and backfilling the deposition chamber with the vapor of a salt precursor to form a perovskite material.

A method of forming a phase change material is provided in which the crystalline state resistance of the material can be controlled through controlling the flow ratio of NH.sub.3/Ar. The method may include providing a flow modulated chemical vapor deposition apparatus. The method may further include flowing gas precursors into the flow modulated chemical vapor deposition apparatus to provide the base material components of the phase change material. The method further includes flowing a co-reactant precursor and an inert gas into the flow modulated chemical vapor deposition, wherein adjusting ratio of the co-reactant precursor to the inert gas adjusts the crystalline state resistance of the phase change material.

A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

There is provided a method of forming a film with improved step coverage on a substrate by performing, a predetermined number of times, forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature and having a ratio of the number of first chemical bonds to the number of second chemical bonds in one molecule thereof, the ratio being equal to or more than 3, to the substrate at a temperature equal to or higher than the second temperature and lower than the first temperature.

Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.

A substrate processing apparatus includes: a reaction tube with a process chamber defined therein, the process chamber being configured to process a substrate; a heating device configured to heat the process chamber; a gas supply part configured to supply a process gas used in processing the substrate; and a plasma generating part including an electrode composed of a first electrode portion connected to a high frequency power supply and a second electrode portion grounded to the earth, which are installed to surround the entire circumference of an outer wall of the reaction tube. An inter-electrode distance between the first electrode portion and the second electrode portion is determined by at least a frequency of the high frequency power supply and a voltage applied across the electrode. The first and second electrode portions are installed based on the determined inter-electrode distance.