A method of filling a recess with a nitride film is performed by repeating a cycle. The cycle includes a film-forming raw material gas adsorption process of adsorbing a raw material gas containing an element forming the nitride film to be formed on a target substrate on which the recess is formed on its surface, and a nitriding process of nitriding the adsorbed raw material gas by nitriding species to fill the recess. At least a portion of a period for forming the nitride film is used as a bottom-up growth period, for which a polymer material adsorbable to the surface of the target substrate is supplied in a gaseous state and is adsorbed to an upper portion of the recess to inhibit adsorption of the film-forming raw material gas, and for which the nitride film is grown from a bottom portion of the recess.

Methods for depositing a thin film with improved film qualities on a hydrogen-terminated surface of a substrate are disclosed. The methods may comprise an atomic layer deposition (ALD) process comprising a plurality of deposition cycles comprising contacting the substrate with a first vapor phase metal halide or metalorganic reactant, contacting the substrate with the second vapor phase reactant, and contacting the substrate with a growth inhibitor. A growth inhibitor may be a non-consumable agent that is not incorporated into the deposited film during the deposition process and helps improve the properties of the deposited film. The growth inhibitor may comprise a vapor phase halide, such as HCl, or an organic molecule.

Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary systems include gas-phase deposition systems, such as atomic layer deposition systems, which include a barrier layer source and/or a scavenging precursor source fluidly coupled to a reaction chamber of the system.

Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 each independently represent a hydrogen atom, C.sub.1˜C.sub.6 alkyl, halo-C.sub.1˜C.sub.6 alkyl, C.sub.2˜C.sub.5 alkenyl, halo-C.sub.2˜C.sub.5 alkenyl, C.sub.3˜C.sub.10 cycloalkyl, halo-C.sub.3˜C.sub.10 cycloalkyl, C.sub.6˜C.sub.10 aryl, halo-C.sub.6˜C.sub.10 aryl or —Si(R.sub.0).sub.3, and wherein R.sub.0 is C.sub.1˜C.sub.6 alkyl or halo-C.sub.1˜C.sub.6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation.

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There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH.sub.4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH.sub.4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.

AnBmXo  [Chemical Formula 1]

wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

There is provided a technique capable of improve the uniformity of the film formed on the substrate. According to one aspect of the technique, there is provided a substrate processing method includes: (a) setting a substrate at a first position such that a distance between the first position and a gas supply port of a film-forming auxiliary gas supplier is a first distance, and causing a film-forming auxiliary gas to be adsorbed onto the substrate by supplying the film-forming auxiliary gas to the substrate; and (b) moving the substrate to a second position such that a distance between the second position and a gas supply port of a source gas supplier is a second distance different from the first distance, and forming a film of a predetermined thickness on the substrate by supplying a source gas.

Disclosed is an ALD device in which a shower head is disposed at a position opposed to a film formation surface of a target workpiece in a chamber and has raw material gas ejection ports and OH* forming gas ejection ports alternately arranged at predetermined intervals in two film-formation-surface directions so as to face the film formation surface. The OH* forming gas ejection ports respectively include first ejection ports for ozone gas ejection and second ejection ports for unsaturated hydrocarbon gas ejection. An oxide film is formed on the film formation surface by ejecting a raw material gas from the raw material gas ejection ports and ejecting an ozone gas and an unsaturated hydrocarbon gas from the first and second ejection ports of the OH* forming gas ejection ports, respectively, while moving the target workpiece along the two film-formation-surface directions.

There is provided a method for forming a nitride film on a substrate to be processed by a thermal ALD which repeats: supplying a film forming raw material gas to the substrate to be processed while heating the substrate to be processed to a predetermined temperature; and supplying a nitriding gas to the substrate to be processed, the nitride film forming method comprises supplying a chlorine-containing gas to the substrate to be processed after the supplying the film forming raw material gas.