In an embodiment a layer system includes a substrate with an anti-fog material on at least one surface, a water-permeable intermediate layer arranged on the surface and a water-permeable nanostructure including a plurality of pillars arranged side by side, the water-permeable nanostructure arranged on the water-permeable intermediate layer.

Methods and apparatus for forming a barrier layer are provided herein. In some embodiments, a method of forming a barrier layer on a substrate includes treating an exposed layer deposited on a substrate and within a feature of the substrate by pulsing a bias power applied to a substrate support supporting the substrate while exposing the layer to a plasma. The exposed layer can be deposited by an atomic layer deposition process, and can be, for example, a tantalum nitride layer. The bias power can be up to 500 watts of RF power at a pulse frequency of about 1 Hz to about 10 kHz. The bias power can be pulsed uniformly or at multiple different levels.

A semiconductor processing chamber for processing semiconductor substrates may include a pedestal to support a substrate with a heater zones and a wire mesh configured to deliver a Radio Frequency (RF) signal to a plasma. The chamber may also include heater zone controls that deliver current to the heater zones and a filter circuit between the heater zone controls and the heater zones. The filter circuit may include inductors on leads from the heater zones and a resonant circuit with a resonant inductor that is magnetically coupled to the lead inductors. The resonant circuit may produce a resonant peak that filters the RF signal delivered to the wire mesh from the leads from the heater zones to prevent the RF signal from reaching the heater zone controls.

A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

Embodiments of the present disclosure generally relate to protective coatings on various substrates including aerospace components and methods for depositing the protective coatings. In one or more embodiments, an aerospace component has a protective coating containing an aluminum oxide layer disposed on a surface of the aerospace component, a metal-containing catalytic layer disposed on the aluminum oxide layer, and a boron nitride layer disposed on the metal-containing catalytic layer. The aerospace component contains a superalloy having at least nickel and aluminum. In some examples, the aerospace component is a turbine blade, a turbine vane, a support member, a frame, a rib, a fin, a pin fin, a fuel nozzle, a combustor liner, a combustor shield, a heat exchanger, a fuel line, a fuel valve, an internal cooling channel, or any combination thereof.

A method and apparatus for processing a surface of a substrate with a cluster apparatus including a transport chamber and two or more process reactors connected to the transport chamber. The method further includes subjecting the surface of the substrate to a surface preparation step for providing a prepared substrate surface, providing an interface layer on the prepared substrate surface of the substrate for forming an interfaced substrate surface, and providing a functional layer on the interfaced substrate surface of the substrate. The process steps are carried out in at least two different process reactors connected to transport chamber the substrate is transported between the at least two process reactors via the transport chamber under vacuum atmosphere.

A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).

The current disclosure relates to processes for selectively etching material from one surface of a semiconductor substrate over another surface of the semiconductor substrate. The disclosure further relates to assemblies for etching material from a surface of a semiconductor substrate. In the processes, a substrate comprising a first surface and a second surface is provided into a reaction chamber, an etch-priming reactant is provided into the reaction chamber in vapor phase; reactive species generated from plasma are provided into the reaction chamber for selectively etching material from the first surface. The etch-priming reactant is deposited on the first surface and the etch-priming reactant comprises a halogenated hydrocarbon. The halogenated hydrocarbon may comprise a head group and a tail group, and one or both of them may be halogenated.