A method for forming a barrier layer in a semiconductor structure is disclosed. A substrate having a dielectric layer is provided. The dielectric layer is exposed to a precursor having a first metal, and a first ammonia treatment is performed. A first purge operation is performed, a second ammonia treatment is performed after the first purge operation, and a second purge operation is performed after the second ammonia treatment to form the barrier layer on the dielectric layer.

A method for forming a film, the method including: forming a SiCN seed layer on a substrate by a thermal ALD, forming a SiN protective layer on the SiCN seed layer by a thermal ALD, and forming a SiN bulk layer on the SiN protective layer by a plasma enhanced ALD.

Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.

According to one aspect of the technique described herein, there is provided a technique including: forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes sequentially performing: (a) supplying source gas to a substrate accommodated in a reaction tube; (b) exhausting the source gas remaining in the reaction tube through an exhaust pipe connected to the reaction tube; (c) supplying a reactive gas reacting with the source gas to the substrate; and (d) exhausting the reactive gas remaining in the reaction tube through the exhaust pipe, wherein at least in (a) and (c), a temperature of the reaction tube is set to a first temperature lower than a thermal decomposition temperature of the source gas and higher than a condensation temperature of the source gas and a temperature of the exhaust pipe is set to a second temperature equal to or higher than the first temperature.

According to one aspect of a technique of the present disclosure, there is provided a method of manufacturing a semiconductor device, including: (A) forming a film containing a predetermined element and nitrogen on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes: (a) forming a first layer by supplying a source gas containing the predetermined element and a halogen element to the substrate heated to a first temperature; (b) forming a second layer by modifying the first layer by supplying a plasma-excited first modification gas containing hydrogen free of nitrogen; and (c) forming a third layer by modifying the second layer by supplying a plasma-excited second modification gas containing nitrogen and hydrogen. A supply time T.sub.H of supplying the first modification gas in (b) is set to be longer than a supply time T.sub.N of supplying the second modification gas in (c).

A technique for improving uniformity of film thickness on substrates, includes a substrate processing apparatus having a substrate retainer including substrate and partition plate supports; a reaction tube; a first driver vertically moving the substrate retainer into or out of the reaction tube; a second driver vertically moved by the first driver and rotating the substrate retainer to change a distance between a substrate and a partition plate by moving at least one of the substrate or the partition plate support; a heater; a gas supplier comprising a nozzle; a gas exhauster; and a controller controlling the first driver, the second driver and the gas supplier such that a gas is supplied to the substrate while changing at least one of a relative position of the substrate and a relative position of the partition plate with respect to a hole of the nozzle by driving the second driver.

There is provided a substrate processing apparatus including a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.

There is provided a technique including a plurality of process chambers to process a substrate; a plurality of standby chambers to accommodate the substrate; a transfer chamber disposed adjacent to the plurality of standby chambers and the plurality of process chambers; a transfer robot in the transfer chamber to transfer the substrate between one of the plurality of process chambers and one of the plurality of standby chambers or between the plurality of standby chambers adjacent to each other across the transfer chamber; a temperature adjustment mechanism to adjust temperature of at least one of the plurality of standby chambers; and a controller capable of controlling the temperature adjustment mechanism to change a mode of temperature adjustment of the at least one of the plurality of standby chambers depending on a transfer path through which the substrate accommodated in the at least one of the plurality of standby chambers passes.

Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.

According to the technique of the present disclosure, there is provided a substrate processing apparatus capable of improving thickness uniformity of a film formed on each substrate. The apparatus includes a substrate retainer; a reaction tube; a vertical driver for moving the substrate retainer into or out of the reaction tube; a heater provided around the reaction tube; a gas supplier having a plurality of gas feeders corresponding to a plurality of substrates, respectively, supported by the substrate retainer; an exhauster through which a gas is exhausted from the reaction tube; and a controller capable of controlling the vertical driver and the gas supplier such that the gas is capable of being supplied through the plurality of gas feeders while maintaining a relative position of a substrate with respect to a gas feeder corresponding thereto at a first position or at a second position different from the first position.