Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

There is provided a technique that includes: a reaction container into which a substrate support including a substrate support region configured to support a substrate and a heat insulator provided below the substrate support region are inserted; a gas supplier configured to supply a gas into the reaction container; and a protruding portion protruding inward from an inner wall of the reaction container on an upper surface side of the heat insulator in a region of the inner wall of the reaction container where the gas supplier and the substrate support do not face each other.

According to one aspect of the present disclosure, there is provided a technique including: (a) stacking and accommodating substrates in a process chamber; (b) supplying a source gas to the plurality of substrates through a first nozzle provided in the process chamber along a stacking direction of the plurality of substrates and a second nozzle provided in the process chamber along the stacking direction of the plurality of substrates, wherein an amount of the source gas supplied through an upper portion of the first nozzle is greater than that of the source gas supplied through a lower portion of the first nozzle, and an amount of the source gas supplied through the lower portion of the second nozzle is greater than that of the source gas supplied through the upper portion of the second nozzle; and (c) supplying a reactive gas to the substrates.

There is provided a technique that includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor gas from a first supplier to the substrate in the process chamber; and (b) supplying a reaction gas from a second supplier to the substrate in the process chamber, wherein in (a), an intermediate is generated by decomposing the precursor gas in the first supplier and in the process chamber, the intermediate is supplied to the substrate, and a decomposition amount of the precursor gas in the first supplier is set larger than a decomposition amount of the precursor gas in the process chamber.

A processing apparatus includes a processing container accommodating a substrate therein, a plasma generator having a plasma generation space communicating with an inside of the processing container, a first gas supply provided in the plasma generation space and configured to supply a hydrogen gas, and a second gas supply provided in the processing container and configured to supply a hydrogen gas.

There is provided a technique that includes: forming a film on a substrate including a recess formed on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate; and (b) supplying a reaction gas to the substrate, wherein in (a), the precursor gas is supplied to the substrate separately a plurality of times, and a processing condition under which the precursor gas is supplied for a first time is set to a processing condition under which self-decomposition of the precursor gas is capable of being more suppressed than a processing condition under which the precursor gas is supplied for at least one subsequent time after the first time.

There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying a non-halogen-based second process gas to the substrate in the process chamber. Further, an internal pressure of the process chamber in the act of supplying the first process gas is set to be higher than an internal pressure of the process chamber in the act of supplying the second process gas.

There is a provided a technique that includes forming a film containing Si, C and N on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor containing a Si—C bond and not containing halogen to the substrate; and (b) supplying a second precursor containing a Si—N bond and not containing an alkyl group to the substrate, wherein (a) and (b) are performed under a condition that at least a part of the Si—C bond in the first precursor and at least a part of the Si—N bond in the second gas are held without being cut.

There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.