An atomic layer deposition apparatus including a deposition head that is rotatably mounted around a central deposition head axis and including a susceptor having an upper surface for carrying substrates. The lower surface comprises a plurality of process sections. Each process section includes a purge gas injection zone, a first precursor gas injection zone, a gas exhaust zone, a purge gas injection zone, a second precursor gas injection zone and a gas exhaust zone. Each zone radially extends from a radially inward part of the lower surface to a radially outward part of the lower surface of the deposition head. The combination of distance between the lower surface and the upper surface, the rotational speed of the deposition head and the flow rate and the pressure of the purge gas flows are selected such that the first and second precursor gases are substantially prevented from mixing.

A reaction chamber of a substrate processing apparatus contains a reaction space. At least three lateral chemical inlets point towards a centre area of the reaction space each from different directions, each of the at least three lateral chemical inlets providing an individually closable route for a first precursor chemical to the reaction space.

A substrate processing apparatus includes: a gas injection portion including two gas distribution portions, disposed on an upper portion in the chamber and spatially separated from each other, and two types of nozzles, respectively connected to the two gas distribution portions, having different lengths to each other; a first electrode, connected to a radio-frequency (RF) power supply and disposed below the gas injection portion to be vertically spaced apart from the gas injection portion, having a plurality of openings into which among the nozzles, one type of nozzles are respectively inserted; and a second electrode, disposed to oppose the first electrode, mounting a substrate.

The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

The invention relates to a nozzle head for subjecting a surface of a substrate to successive surface reactions of at least two precursor gases according to the principles of atomic layer deposition. The nozzle head comprises a body; an output face via which at least one precursor gas is supplied towards the surface of the substrate; and two or more nozzles provided in connection with the output face for supplying the at least one precursor gas. The nozzle head further comprises a nozzle head chamber inside the body of the nozzle head, said nozzle head chamber is arranged in fluid communication with the two or more nozzles. The nozzle head chamber is provided with a gas inlet for supplying gas into the nozzle head chamber from a gas source outside the nozzle head.

An ALD or digital CVD apparatus and method for microparticles are proposed. The apparatus and the method use an impact, which is caused by the pulsed introduction of a precursor or a purging gas to be introduced into a reactor, without additional vibration or rotation of the reactor, so as to inhibit the agglomeration of particles to be applied to a surface and enable dispersion to be maximized, thereby enabling each particle to be uniformly applied, and simultaneously preventing the loss, in the reactor during processing, of powder to be coated without an additional separate filter or filler. A deposition reactor has a structure in which at least two overlapping reactors are provided. A reactant or a purging gas directly flows into an inner reactor in which a chemical reaction occurs. A purging step is simultaneously carried out in inner and outer reactors.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. By flowing precursor gases at different flow rates in the different regions, thin films can be simultaneously formed in the different regions having different film thicknesses.

Methods and systems for conformality modulation of metal oxide films in atomic layer deposition (ALD) are provided. Some example methods use chemical inhibition. An example system for performing such a method comprises a chamber; a source of precursor gas; a source of inhibiting precursor gas; one or more injectors having respective gas flow paths, each having an inlet connectable to the source of the precursor or the inhibiting precursor gas, and being adapted to deliver into the chamber, separately or in conjunction with another injector, precursor gas at a first gaseous flow rate in a first region of the plurality of regions to form a first film at a first deposition rate, and being adapted to deliver inhibiting precursor gas at a second gaseous flow rate in the same or a second region of the plurality of regions to inhibit growth of the first film.

A shower head of a combinatorial spatial atomic layer deposition (CS-ALD) apparatus may be provided. The shower head of the CS-ALD apparatus may include a plurality of shower blocks. Each of shower blocks may include a plurality of unit modules. Each of the shower blocks and each of the unit modules may be controlled independently from each other. Each of the plurality of unit modules may include a source gas injection nozzle, a purge gas injection nozzle, a reactant gas injection nozzle, and exhaust areas between the injection nozzles. The plurality of shower blocks may be separated from each other. Gas injection areas of the injection nozzles may be separated from the exhaust area.