Provides a flexible copper clad laminate, which includes a polyimide substrate; a nickel-copper alloy layer; and a copper layer. The nickel-copper alloy layer is formed on at least one side of the polyimide substrate by electroless plating and comprises at least nickel, copper and phosphorus. A content of the copper is more than 30 wt % of the nickel-copper alloy layer, a content of the phosphorus is less than 5 wt % of the nickel-copper alloy layer, and a corrosion potential of the nickel-copper alloy layer in a 0.02 vol % sulfuric acid solution is greater than 20 mV. The copper layer is formed on a side of the nickel-copper alloy layer away from the polyimide substrate and combined with the nickel-copper alloy layer to form a metal conductive layer. In addition, the aforementioned flexible copper clad laminate has electrochemical corrosion resistance and sufficient peel strength, facilitating the production of flexible printed circuit boards.

Electroless deposition processes for semiconductor device fabrication are provided. In one example, a method for electroless deposition of a metal layer on a wide bandgap semiconductor device includes providing a semiconductor wafer having one or more wide bandgap semiconductor devices. The method includes performing an activation layer deposition process on at least a portion of the semiconductor wafer to deposit an activation layer. At least a portion of the activation layer deposition process comprises an activation layer etchant process. The method includes depositing one or more metal layers on the activation layer using an electroless deposition process. Conducting the activation layer etchant process includes providing the semiconductor wafer in an etchant bath for a first process period; removing the semiconductor wafer from the etchant bath; and after removing the semiconductor wafer from the etchant bath, providing the semiconductor wafer in the etchant bath for a second process period.

A structure, comprising a strike layer on a thermally dissipative substrate, having a conductive surface; and a spatially-selective electrochemically bonded composite structure, containing inclusions bonded to a matrix of the electrochemically bonded composite structure. The matrix of the electrochemically bonded composite structure may be a metal, and the inclusions comprise solid particles of metal or high thermal conductivity non-metal. The particles may increase the thermal transfer rate and/or reduce the coefficient of thermal expansion of the electrochemically bonded composite structure.

The present disclosure is directed to an electroless plating process using a panel basket for holding semiconductor panels comprising a plurality of metal pads and shielding the metal pads from contaminants and over-etching and under-etching caused by the contaminants.

In various embodiments, the present application provides electrically conductive metal-plated fibers and continuous processes of preparing metal-plated fibers. Additionally, provided are polymeric articles comprising the provided metal-plated fibers or other fibers prepared by the provided process, said articles having electromagnetic interference shielding effectiveness.

An electroless plating apparatus includes: a plating bath; a reserve tank; a retaining means for retaining a plurality of semiconductor wafers upright at regular intervals; a plating liquid circulating path; a circulating pump; a flowmeter and a plating liquid supply pipe having a plurality of spouts formed in an upper part thereof at regular intervals. The regular intervals at which the plurality of semiconductor wafers are retained upright by the retaining means are the same as the regular intervals at which the plurality of spouts are formed in the upper part of the plating liquid supply pipe. The plurality of spouts formed on the upper part of the plating liquid supply pipe may be positioned within the regular intervals between the plurality of semiconductor wafers being retained by the retaining means.