Provided is a semiconductor device, including: a front-back conduction-type semiconductor element; a front-side electrode formed on the front-back conduction-type semiconductor element; an electroless nickel-containing plating layer formed on the front-side electrode; and an electroless gold plating layer formed on the electroless nickel-containing plating layer, wherein the semiconductor device has a low-nickel concentration layer on a side of the electroless nickel-containing plating layer in contact with the electroless gold plating layer, and wherein the low-nickel concentration layer has a thickness smaller than that of the electroless gold plating layer.

The present invention relates to a method for reducing the optical reflectivity of a copper and copper alloy circuitry wherein a thin palladium or palladium alloy layer is deposited by immersion-type plating onto said copper or copper alloy. Thereby, a dull greyish or greyish black or black layer is obtained and the optical reflectivity of said copper or copper alloy circuitry is reduced. The method according to the present invention is particularly suitable in the manufacture of image display devices, touch screen devices and related electronic components.

An electroless surface treatment plated layer of a printed circuit board, a method for preparing the same, and printed circuit board including the same. The electroless surface treatment plated layer includes: electroless nickel (Ni) plated coating/palladium (Pd) plated coating/gold (Au) plated coating, wherein the electroless nickel, palladium, and gold plated coatings have thicknesses of 0.02 to 1 μm, 0.01 to 0.3 μm, and 0.01 to 0.5 μm, respectively. In the electroless surface treatment plated layer of the printed circuit board, a thickness of the nickel plated coating is specially minimized to 0.02 to 1 μm, thereby making it possible to form an optimized electroless Ni/Pd/Au surface treatment plated layer.

A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.

A plating bath at least contains a palladium compound, a reducing agent, a complexing agent, and a stabilizer. The stabilizer is an organic compound in which a divalent sulfur compound is bonded to a compound with a heterocyclic structure, and the organic compound contains neither a thiol group nor a disulfide bond.

Metalized plastic substrates, and methods thereof are provided herein. The method includes providing a plastic substrate having a plurality of accelerators dispersed in the plastic substrate. The accelerators have a formula selected from the group consisting of: CuFe.sub.2O.sub.4−δ, Ca.sub.0.25Cu.sub.0.75TiO.sub.3−β, and TiO.sub.2−σ, wherein δ, β, σ denotes oxygen vacancies in corresponding accelerators and 0.05≦δ≦0.8, 0.05≦β≦0.5, and 0.05≦σ≦1.0. The method further includes removing at least a portion of a surface of the plastic substrate to expose at least a first accelerator. The method further includes plating the exposed surface of the plastic substrate to form at least a first metal layer on the at least first accelerator, and then plating the first metal layer to form at least a second metal layer.

A method of manufacturing an orthodontic appliance includes plating a first pattern of a material on a substrate to define a layer. Repeating plating of the first material one or more times forms an additional pattern. A layered structure is built up and forms a portion of the orthodontic appliance. A pattern of a second material different from a first material may be plated on the substrate or on a pattern of the first material. The material may be a sacrificial material that may be later removed. The orthodontic appliance may be an archwire or a self-ligating orthodontic bracket having one or more layered structures formed by plating patterns of the material. Plating may include plating patterns of materials so as to form a movable member in place relative to a bracket body.

A semiconductor substrate has, on an Au electrode pad, an electrolessly-plated Ni film/an electrolessly-plated Pd film/an electrolessly-plated Au film or an electrolessly-plated Ni film/an electrolessly-plated Au film and a method of manufacturing the semiconductor substrate by the steps indicated in (1) to (6) below: (1) a degreasing step; (2) an etching step; (3) a pre-dipping step; (4) a Pd catalyst application step; (5) an electroless Ni plating step; (6) an electroless Pd plating step and electroless Au plating step or an electroless Au plating step.

A catalyst layer can be uniformly formed on an entire surface of a substrate and an entire inner surface of a recess. A catalyst layer forming method of forming the catalyst layer on the substrate includes a first supply processing of forming a substrate surface catalyst layer 22A by supplying a catalyst liquid on the entire surface of the substrate 2; and a second supply processing of forming a recess inner surface catalyst layer 22B by supplying the catalyst liquid to a central portion of the substrate 2 while rotating the substrate 2.

A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.